应用材料 AMAT MESA 2 蚀刻设备用途：主要用于半导体制造过程中的蚀刻环节，可对多种材料进行精准蚀刻。适用于集成电路、芯片制造等领域，能够在晶圆表面精确去除不需要的材料，以形成特定的电路图案和结构 。性能：可处理多种尺寸晶圆，如 150mm、200mm 等。具备先进的等离子蚀刻技术，能精准控制蚀刻速率和深度。在浅槽隔离（STI）工艺中，对于 0.25um 以下制程、深 0.3 - 0.8um、深宽比 2:1 - 5:1（DRAM 器件需求下更高）的沟槽刻蚀，可利用离子和强腐蚀性化学物质，在光刻后的硅片上精准去除无光刻胶保护区域的氮化硅、氧化硅和硅，且能保证沟槽倾斜侧壁及圆滑底面。支持多种蚀刻气体，如 SiCl₄、HBr、C₄F₈、NF₃等，能满足不同蚀刻工艺需求 。

Product Name: Applied Materials AMAT MESA 2 Etching EquipmentPurpose: It is mainly used in the etching process of semiconductor manufacturing and can precisely etch a variety of materials. It is suitable for fields such as integrated circuits and chip manufacturing. It can accurately remove unwanted materials on the wafer surface to form specific circuit patterns and structures.Performance: It can process wafers of various sizes, such as 150mm and 200mm. It is equipped with advanced plasma etching technology, which can precisely control the etching rate and depth. In the shallow trench isolation (STI) process, for trenches with a process below 0.25um, a depth of 0.3 - 0.8um, and an aspect ratio of 2:1 - 5:1 (even higher under DRAM device requirements), it can use ions and highly corrosive chemicals to precisely remove silicon nitride, silicon oxide, and silicon in the areas without photoresist protection on the lithographed silicon wafer, and can ensure the inclined sidewalls and smooth bottom surface of the trenches. It supports a variety of etching gases, such as SiCl₄, HBr, C₄F₈, NF₃, etc., to meet different etching process requirements.