卡尔・休斯 KARL SUSS MICROTEC MA 45 掩模对准曝光机用途：适用于半导体制造、MEMS 研发、微纳结构制作等领域，可将掩模图案精准转移到晶圆等基底表面，完成光刻制程。常用于处理最大 4 英寸的晶圆或基底，也能加工较小尺寸芯片或非标准基底，基底最大厚度为 5mm 。性能：曝光光源为 350W 的 Hg/Xe 灯，主要提供 365nm 和 405nm 波长的紫外线能量。在 405nm 峰值处，宽带光源校准为 20mJ/sec，总宽带剂量约 30mJ/sec 。具备顶部对准（TSA）功能。支持软接触、硬接触和真空接触曝光模式，可进行泛光曝光。拥有 10mm 行程的工作平台，显微镜物镜行程 100mm，可选分视场相机。配备 3 英寸和 4 英寸卡盘，也有经工作人员许可后可安装的用于厚基底的特殊卡盘，还有 4 英寸和 5 英寸掩模支架 。

Product Name: KARL SUSS MICROTEC MA 45 Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing, MEMS R & D, and micro - nano structure fabrication. It can accurately transfer the mask pattern onto the surface of wafers and other substrates to complete the lithography process. It is often used for processing wafers or substrates up to 4 inches in size, and can also process smaller chips or non - standard substrates with a maximum substrate thickness of 5mm.Performance: The exposure light source is a 350W Hg/Xe lamp, mainly providing ultraviolet energy at wavelengths of 365nm and 405nm. At the 405nm peak, the broadband light source is calibrated to 20mJ/sec, and the total broadband dose is about 30mJ/sec. It has a topside alignment (TSA) function. It supports soft - contact, hard - contact, and vacuum - contact exposure modes and can perform flood exposure. It has a working platform with a 10mm travel, a microscope objective with a 100mm travel, and an optional split - field camera. It is equipped with 3 - inch and 4 - inch chucks, as well as a special chuck for thick substrates that can be installed with staff permission, and also has 4 - inch and 5 - inch mask holders.