佳能 CANON MPA 600 FA 掩模对准曝光机用途：适用于半导体制造、集成电路生产、微机电系统研发等领域，可处理 4 英寸、5 英寸、6 英寸晶圆，用于将掩模图案精准转移至晶圆表面，完成光刻制程，满足芯片、传感器等微小精密部件的制造及科研需求。性能：分辨率可达 1.5μm（使用正性光刻胶） 。采用 2kW 高压汞灯照明，有 365nm（i-line）、405nm（h-line）、436nm（g-line）波长。在 1800W 功率输出时，4 英寸晶圆光照强度超 700mW，5 英寸超 650mW，6 英寸超 600mW ，光强 / 曝光均匀性在 ±3% 以内。具备自动温度控制系统，监测并将系统温度控制在 ±0.3℃内。自动对准采用氦氖（633nm）激光束扫描，对准精度 3σ≤0.54μm 。支持单双片、盒对盒、背面晶圆处理功能，可适配 5 英寸、6 英寸、7 英寸掩模 。

Product Name: CANON MPA 600 FA Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing, integrated circuit production, and micro - electromechanical systems R & D. It can process 4 - inch, 5 - inch, and 6 - inch wafers, accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and meet the manufacturing and research needs of tiny and precise components such as chips and sensors.Performance: The resolution can reach 1.5μm (using positive photoresist). It uses a 2kW high - pressure mercury lamp for illumination, with wavelengths of 365nm (i - line), 405nm (h - line), and 436nm (g - line). At a power output of 1800W, the light intensity on a 4 - inch wafer exceeds 700mW, on a 5 - inch wafer exceeds 650mW, and on a 6 - inch wafer exceeds 600mW. The light intensity/exposure uniformity is within ±3%. It has an automatic temperature control system that monitors and controls the system temperature within ±0.3℃. Automatic alignment uses a helium - neon (633nm) laser beam for scanning, and the alignment accuracy is 3σ≤0.54μm. It supports single/double - piece, cassette - to - cassette, and back - side wafer handling functions and can be adapted to 5 - inch, 6 - inch, and 7 - inch masks.