佳能 CANON PLA 501 掩模对准曝光机用途：主要应用于半导体制造领域，可对 2 至 5 英寸晶片进行光刻作业，能将光掩模图案精准定位在目标基板上，完成光刻制程，适用于芯片、集成电路等微电子产品的生产，也可用于科研机构相关实验。性能：最大对准精度可达 1.5µm，最大脱模角度为 10°，最大曝光场尺寸 10mmø 。采用步进重复技术实现精准对准与聚焦。配备 250W 高压汞灯，经滤光产生 g 线、h 线和 i 线组合波长用于曝光。具备自动对焦功能，通过 CCD 相机扫描确定最佳对准位置，并借助 x、y、θ 控制系统精确调整载物台位置，保障图案转移的准确性。显微镜可在 x、y 方向 ±10mm 范围内扫描，便于操作时观察晶圆与掩模 。

Product Name: CANON PLA 501 Mask AlignerPurpose: It is mainly applied in the semiconductor manufacturing field. It can perform lithography on 2 - 5 - inch wafers, accurately position the photomask pattern on the target substrate, complete the lithography process, and is suitable for the production of micro - electronic products such as chips and integrated circuits. It can also be used for relevant experiments in scientific research institutions.Performance: The maximum alignment accuracy can reach 1.5µm, the maximum release angle is 10°, and the maximum exposure field size is 10mmø. It adopts step - and - repeat technology to achieve precise alignment and focusing. It is equipped with a 250W high - pressure mercury lamp, which generates a combination of g - line, h - line, and i - line wavelengths after filtering for exposure. It has an autofocus function. The CCD camera scans to determine the optimal alignment position, and the x, y, θ control system is used to precisely adjust the stage position to ensure the accuracy of pattern transfer. The microscope can be scanned within ±10mm in both the x and y directions, facilitating the observation of the wafer and mask during operation.