卡尔・休斯 KARL SUSS MICROTEC MJB-21 双面掩模对准曝光机用途：用于亚微米光刻，可将图案精准转移至半导体晶圆等基底的光刻胶上，适用于半导体制造、微纳加工等领域。性能：最大可处理 3 英寸晶圆，适配 4 英寸 ×4 英寸掩模。掩模与晶圆对准精度 ±2.0μm，掩模与掩模对准精度 ±1μm。有 X、Y 向粗调 10mm、微调 1mm 的对准台，旋转范围 10°。配备 2 个 350W 高压汞弧灯，曝光光束直径 80mm，曝光时间 0.3 秒至 30 小时可调，光积分时间 0.1 秒至 16 分钟。搭配 35 倍、100 倍水平分视场显微镜，带 12V、20W 卤素照明及 12V、20W 暗场照明（最大 2 英寸） 。

Product Name: KARL SUSS MICROTEC MJB - 21 Double - Sided Mask AlignerPurpose: It is used for sub - micron lithography and can accurately transfer patterns onto the photoresist of substrates such as semiconductor wafers. It is suitable for semiconductor manufacturing, micro - nano processing and other fields.Performance: It can handle wafers up to 3 inches in size and is suitable for 4 - inch × 4 - inch masks. The alignment accuracy between the mask and the wafer is ±2.0μm, and the alignment accuracy between masks is ±1μm. There is an alignment stage with a coarse adjustment of 10mm and a fine adjustment of 1mm in the X and Y directions, with a rotation range of 10°. It is equipped with 2 high - pressure mercury arc lamps of 350W each, the exposure beam diameter is 80mm, the exposure time is adjustable from 0.3 seconds to 30 hours, and the light integration time is from 0.1 seconds to 16 minutes. It is equipped with a 35 - x and 100 - x horizontal split - field microscope, with 12V, 20W halogen illumination and 12V, 20W dark - field illumination (up to 2 inches).