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卡尔·休斯 KARL SUSS MICROTEC MA 56 / MJB55 掩模对准光刻机

库存状态:现货

卡尔・休斯 KARL SUSS MICROTEC MA 56 / MJB55 掩模对准曝光机用途:适用于集成电路制造、MEMS 研发及其他微纳结构制作等领域,可将掩模图案精准转移到晶圆等基底表面,完成光刻制程。常用于处理 3 - 5 英寸晶圆,也能加工更小尺寸芯片或非标准基底(最大尺寸可达 4”x4”)。性能:MA 56 配备 350W 曝光单元,光源波长如 310nm(30W 氘灯)、365nm(350W 汞弧灯)等可选,含 UV - 400 曝光光学元件(365 - 405nm 波长)。分辨率方面,接近式曝光为 3µm,真空接触式曝光达 0.8 - 1µm 。具备 x、y、omega 调节平台及显微镜操控装置,支持手动、半自动或全自动曝光。有盒对盒晶圆传送系统,带预对准工位。MJB55 可处理 2.5”x2.5”(可扩展至 5”)的基底。两款设备均需真空、压缩空气、氮气及相应电力(如 MA 56 为 1.1kW)等公用设施支持运行 。

Product Name: KARL SUSS MICROTEC MA 56 / MJB55 Mask AlignerPurpose: It is suitable for fields such as integrated circuit manufacturing, MEMS R & D, and other micro - nano structure fabrication. It can accurately transfer the mask pattern onto the surface of wafers and other substrates to complete the lithography process. It is often used for processing 3 - 5 - inch wafers, and can also process smaller chips or non - standard substrates (with a maximum size of 4”x4”).Performance: MA 56 is equipped with a 350W exposure unit, and the light source wavelengths such as 310nm (30W deuterium lamp) and 365nm (350W mercury arc lamp) are optional, including UV - 400 exposure optics (365 - 405nm wavelength). In terms of resolution, it is 3µm for proximity exposure and 0.8 - 1µm for vacuum contact exposure. It has x, y, omega adjustment platforms and microscope control devices, and supports manual, semi - automatic, or fully automatic exposure. There is a cassette - to - cassette wafer transfer system with a pre - alignment station. MJB55 can handle substrates of 2.5”x2.5” (expandable to 5”). Both devices require utilities such as vacuum, compressed air, nitrogen, and corresponding power (e.g., 1.1kW for MA 56) to operate.

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