EVG EVG 6200 掩模对准曝光机用途：适用于半导体制造、MEMS 研发、先进封装及纳米技术等领域，可处理最大 200mm（8 英寸）晶圆，能将掩模图案精准转移到晶圆表面，完成光刻制程，也适用于科研及小规模生产，支持多种光刻工艺。性能：具备顶部和背面对准功能，对准精度高，上侧对准精度≤±0.5µm，底侧对准精度≤±1.0µm 。支持真空接触、硬接触、软接触、接近式、弯曲模式等曝光模式。采用 350W - 1000W 汞灯光源（也可选 UV - LED 光源），搭配曝光光学元件，提供 350nm - 450nm 宽带光，在 150mm 范围内光强均匀度为 ±4%，200mm 范围内为 ±5%。拥有自动楔形补偿系统，可提高曝光一致性。操作界面基于微软 Windows 系统，易于使用。设备占地空间小，可从半自动升级为全自动版本。首次印刷模式下，吞吐量可达 180 片晶圆 / 小时，自动对准模式下为 140 片晶圆 / 小时 。

Product Name: EVG EVG 6200 Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing, MEMS R & D, advanced packaging, and nanotechnology. It can handle wafers up to 200mm (8 inches) in size, accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and is also applicable to scientific research and small - scale production, supporting a variety of lithography processes.Performance: It has topside and backside alignment functions with high alignment accuracy. The topside alignment accuracy is ≤±0.5µm, and the bottom - side alignment accuracy is ≤±1.0µm. It supports exposure modes such as vacuum contact, hard contact, soft contact, proximity, and bending mode. It uses a 350W - 1000W mercury lamp light source (or a UV - LED light source can be selected) and is paired with exposure optics to provide broadband light of 350nm - 450nm, with a light intensity uniformity of ±4% within 150mm and ±5% within 200mm. It has an automatic wedge compensation system to improve exposure consistency. The operation interface is based on the Microsoft Windows system and is easy to use. The equipment occupies a small space and can be upgraded from a semi - automated version to a fully automated version. In the first - print mode, the throughput can reach 180 wafers per hour, and in the automatic alignment mode, it is 140 wafers per hour.