佳能 CANON PLA 521FA 掩模对准曝光机用途：用于半导体制造、微机电系统（MEMS）生产等领域，主要对最大 4 英寸晶圆进行光刻操作，可将掩模图案精准转移到晶圆表面，完成光刻制程，以满足芯片、传感器等微小精密部件的制造需求。性能：配备 250W 高压汞灯，能产生 g 线（436nm）、h 线（405nm）、i 线（365nm）等特定波长光线用于曝光。接触式曝光分辨率可达 1.5μm，接近式曝光分辨率为 3μm。支持自动对准，通过氦氖（633nm）激光束扫描，对准精度 3σ≤0.54μm。曝光均匀性控制在 ±3% 以内。可处理 2 - 4 英寸晶圆，支持盒对盒自动上下料，同时具备背面晶圆处理功能，能适配 5 英寸、6 英寸掩模版 。

Product Name: CANON PLA 521FA Mask AlignerPurpose: It is used in fields such as semiconductor manufacturing and micro - electromechanical systems (MEMS) production. It mainly performs lithography on wafers up to 4 inches. It can accurately transfer the mask pattern onto the wafer surface to complete the lithography process, meeting the manufacturing requirements of tiny and precise components such as chips and sensors.Performance: It is equipped with a 250W high - pressure mercury lamp, which can generate specific wavelength light such as g - line (436nm), h - line (405nm), and i - line (365nm) for exposure. The contact exposure resolution can reach 1.5μm, and the proximity exposure resolution is 3μm. It supports automatic alignment. Through scanning with a helium - neon (633nm) laser beam, the alignment accuracy is 3σ≤0.54μm. The exposure uniformity is controlled within ±3%. It can process 2 - 4 - inch wafers, supports cassette - to - cassette automatic loading and unloading, and also has a back - side wafer handling function. It can be adapted to 5 - inch and 6 - inch masks.