佳能 CANON FPA 121 步进式光刻机用途：适用于半导体制造领域，主要用于处理 4 - 6 英寸晶圆，将掩模图案精准转移至晶圆表面，完成光刻制程，助力芯片、传感器等微小精密部件的制造，常用于成熟制程芯片生产。性能：曝光光源为 1.5kW 超高压汞灯，波长为 g 线（436nm）。数值孔径 0.45，分辨率可达 0.8μm。曝光区域 15mm，缩小倍率 1/5。照明强度≤350mw，均匀性≥1.5%。掩模版对准光源为 g 线（436nm），采用图像处理法自动对准；晶圆对准光源为氦镉激光（442nm），对准精度（均值 + 3σ）≤0.2μm 。XY 工作台步进精度（均值 + 3σ）≤0.12μm 。自动对焦采用 3 通道 LED - PSD 光学系统，测量稳定性（3σ）≤0.2μm，重复性（3σ）≤0.22μm 。机械预对准精度（3σ）≤50μm 。可使用 5 英寸掩模版 。

Product Name: CANON FPA 121 Wafer StepperPurpose: It is suitable for the semiconductor manufacturing field, mainly used for processing 4 - 6 - inch wafers, accurately transferring the mask pattern onto the wafer surface to complete the lithography process, facilitating the manufacturing of tiny and precise components such as chips and sensors, and is often used in the production of chips with mature processes.Performance: The exposure light source is a 1.5kW ultra - high - pressure mercury lamp with a wavelength of g - line (436nm). The numerical aperture is 0.45, and the resolution can reach 0.8μm. The exposure area is 15mm, and the reduction ratio is 1/5. The illumination intensity is ≤350mw, and the uniformity is ≥1.5%. The reticle alignment light source is g - line (436nm), and automatic alignment is carried out using the image processing method; the wafer alignment light source is a helium - cadmium laser (442nm), and the alignment accuracy (mean + 3σ) is ≤0.2μm. The stepping accuracy of the XY stage (mean + 3σ) is ≤0.12μm. Autofocus uses a 3 - channel LED - PSD optical system, with measurement stability (3σ) ≤0.2μm and repeatability (3σ) ≤0.22μm. The mechanical pre - alignment accuracy (3σ) is ≤50μm. A 5 - inch reticle can be used.