卡尔・休斯 KARL SUSS MICROTEC MA 4/6 掩模对准曝光机用途：适用于半导体研究、MEMS 开发、微纳结构制造等领域。可将掩模图案精准转移到晶圆或其他基底材料上，完成光刻制程。能处理最大 6 英寸（150mm）的晶圆，也可加工小至 5x5mm 的芯片及不规则形状的基底，最大基底厚度 6mm。性能：曝光光源有多种波长可选，如 250 - 450nm，常用 i - 线（365nm）和 g - 线（436nm）。在真空接触最佳条件下，分辨率可达 0.6µm。具备顶部和背面对准功能，顶部对准精度可达 ±0.5µm，背面对准精度约 ±1µm 。支持硬接触、软接触、真空接触等曝光模式，接近式曝光距离可调节。显微镜配备 5 倍、10 倍等物镜辅助精确对准，还有自动楔补偿系统确保基底与掩模平行。

Product Name: KARL SUSS MICROTEC MA 4/6 Mask AlignerPurpose: It is suitable for fields such as semiconductor research, MEMS development, and micro - nano structure manufacturing. It can accurately transfer the mask pattern onto wafers or other substrate materials to complete the lithography process. It can handle wafers up to 6 inches (150mm) in size, as well as chips as small as 5x5mm and irregularly shaped substrates, with a maximum substrate thickness of 6mm.Performance: The exposure light source has a variety of wavelength options, such as 250 - 450nm, and i - line (365nm) and g - line (436nm) are commonly used. Under the best conditions of vacuum contact, the resolution can reach 0.6µm. It has top - side and back - side alignment functions, with the top - side alignment accuracy reaching ±0.5µm and the back - side alignment accuracy about ±1µm. It supports exposure modes such as hard contact, soft contact, and vacuum contact, and the proximity exposure distance can be adjusted. The microscope is equipped with 5x, 10x and other objectives to assist in precise alignment, and also has an automatic wedge compensation system to ensure the parallelism between the substrate and the mask.