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https://rc0.zihu.com/g5/M00/3F/F8/CgAGbGiMcX6AHW8oAADK2aATc-E02.jpeg
阿斯麦 ASML XT 1250B 双工作台步进扫描光刻机

库存状态:现货

阿斯麦 ASML XT 1250B 光刻机用途:主要用于半导体芯片制造领域,可处理 200mm 与 300mm 晶圆,适用于 65nm 制程的大规模生产,也能满足 45nm 制程的前期研发与测试需求,通过将掩模版上的精细电路图形精准曝光到涂有光刻胶的晶圆表面,完成光刻工序。性能:采用 193nm ArF 激光光源,搭配数值孔径为 0.85 的蔡司 Star Lith 1250 双远心 4 倍缩小镜头,以及 Aerial II 照明器技术,可实现 70nm 半节距分辨率 。具备先进的双晶圆台技术,一个晶圆进行曝光时,另一个能同步完成测量和对准,每小时可处理约 114 片 300mm 晶圆 。套刻精度(均值 + 3σ)≤8nm 。拥有 Ultra - k1 套件,可显著提升工艺宽容度、焦深和关键尺寸控制能力。照明系统能提供稳定且均匀的光照,保障光刻质量 。

Product Name: ASML XT 1250B Lithography MachinePurpose: It is mainly used in the semiconductor chip manufacturing field and can process 200mm and 300mm wafers. It is suitable for the mass production of 65nm processes and can also meet the pre - production R & D and testing requirements of 45nm processes. By accurately exposing the fine circuit patterns on the photomask onto the surface of the wafer coated with photoresist, the lithography process is completed.Performance: It adopts a 193nm ArF laser light source, is equipped with a Zeiss Star Lith 1250 double - telecentric 4 - times reduction lens with a numerical aperture of 0.85, and Aerial II illuminator technology, which can achieve a 70nm half - pitch resolution. It has advanced dual - wafer stage technology. While one wafer is being exposed, the other can be measured and aligned simultaneously, and it can process about 114 300mm wafers per hour. The overlay accuracy (mean + 3σ) is ≤8nm. It has an Ultra - k1 package, which can significantly improve process latitude, depth of focus and critical dimension control capabilities. The illumination system can provide stable and uniform illumination to ensure the lithography quality.

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