佳能 CANON FPA 1550 M IV-W 步进式光刻机用途：适用于半导体制造领域，主要用于 4 - 6 英寸晶圆的光刻作业，可将掩模图案精准转移至晶圆表面，完成光刻制程，常用于成熟制程芯片生产以及 MEMS、传感器等微小精密部件制造。性能：曝光光源为 2.0kW 超高压汞灯，波长为 g 线（436nm） 。数值孔径 0.48，分辨率≤0.7μm。曝光区域 22mm，缩小倍率 1/5 。照明系统具备自动调光功能，可预估曝光量。掩模版对准光源为 g 线（436nm），采用图像处理法自动对准；晶圆对准光源为氦氖激光（633nm）与氦镉激光（442nm），对准精度（均值 + 3σ）≤0.15μm 。XY 工作台采用滚动式，步进精度（均值 + 3σ）≤0.10μm 。自动对焦采用 5 通道 LED-PSD 光学系统，测量稳定性（3σ）≤0.15μm，重复性（3σ）≤0.17μm 。晶圆采用 3 点支撑自动调平，机械预对准精度（3σ）≤40μm 。可使用 5 英寸石英掩模版，具备独立叶片式光阑实现全掩模功能 。

Product Name: CANON FPA 1550 M IV - W Wafer StepperPurpose: It is suitable for the semiconductor manufacturing field, mainly used for lithography of 4 - 6 - inch wafers. It can accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and is often used in the production of chips with mature processes and the manufacturing of tiny and precise components such as MEMS and sensors.Performance: The exposure light source is a 2.0kW ultra - high - pressure mercury lamp with a wavelength of g - line (436nm). The numerical aperture is 0.48, and the resolution is ≤0.7μm. The exposure area is 22mm, and the reduction ratio is 1/5. The illumination system has an automatic dimming function and can estimate the exposure amount. The reticle alignment light source is g - line (436nm), and automatic alignment is carried out using the image processing method; the wafer alignment light sources are He - Ne laser (633nm) and He - Cd laser (442nm), and the alignment accuracy (mean + 3σ) is ≤0.15μm. The XY stage adopts a rolling type, and the stepping accuracy (mean + 3σ) is ≤0.10μm. Autofocus uses a 5 - channel LED - PSD optical system, with measurement stability (3σ) ≤0.15μm and repeatability (3σ) ≤0.17μm. The wafer is automatically leveled by 3 - point support, and the mechanical pre - alignment accuracy (3σ) is ≤40μm. A 5 - inch quartz reticle can be used, and an independent vane - type diaphragm is equipped to achieve the full - mask function.