卡尔・休斯 KARL SUSS MICROTEC MA 8 / BA 8 Gen 2 掩模对准曝光机用途：适用于 MEMS（微机电系统）、3D 封装、微光学、纳米技术等领域，可将掩模图案精准转移到 2 英寸至 8 英寸的晶圆及碎片表面，完成光刻制程。性能：曝光光源为汞灯，波长范围 350 - 450nm，支持恒定光强和恒定功率模式。配备消衍射及微镜式光学系统，能在 “高分辨率” 和 “大景深” 模式间切换，分辨率优于 1.5μm。具备顶部和背面对准功能，正面对准精度优于 ±0.5μm，背面对准精度优于 ±1.0μm 。支持硬接触、软接触、接近式和真空接触等曝光模式，接近式曝光调节范围至少 0 - 300μm，光强均匀度不高于 ±4%@200mm 圆片。对准台设有全自动非接触式芯片厚度补偿系统。

Product Name: KARL SUSS MICROTEC MA 8 / BA 8 Gen 2 Mask AlignerPurpose: It is suitable for fields such as MEMS (Micro - Electro - Mechanical Systems), 3D packaging, micro - optics, and nanotechnology. It can accurately transfer the mask pattern onto the surface of wafers and fragments ranging from 2 inches to 8 inches to complete the lithography process.Performance: The exposure light source is a mercury lamp with a wavelength range of 350 - 450nm, supporting constant light intensity and constant power modes. It is equipped with a diffraction - eliminating and micro - mirror optical system, which can switch between "high - resolution" and "large - depth - of - field" modes, with a resolution better than 1.5μm. It has top - side and back - side alignment functions, with the top - side alignment accuracy better than ±0.5μm and the back - side alignment accuracy better than ±1.0μm. It supports exposure modes such as hard contact, soft contact, proximity, and vacuum contact. The proximity exposure adjustment range is at least 0 - 300μm, and the light intensity uniformity is not higher than ±4%@200mm wafer. The alignment stage is equipped with a fully automatic non - contact chip thickness compensation system.