佳能 CANON PLA-501E 掩模对准曝光机用途：用于半导体器件制造，可将光掩模图案精准定位在目标基板（如最大 4 英寸晶圆）上，适用于光刻制程，满足芯片、集成电路等微电子产品的生产需求。性能：最大对准精度达 1.5µm 。配备 250W 高压汞灯，经滤光产生 g 线、h 线和 i 线组合波长。显微镜可在 x、y 方向 ±10mm 范围内扫描，方便操作时观察晶圆与掩模。支持自动上料，采用标准 4 英寸掩模。采用步进重复技术，最大曝光场尺寸为 10mmø，最大脱模角度 10°。具备自动对焦功能，通过 CCD 相机扫描确定最佳对准位置，并通过 x、y、θ 控制系统精确调整载物台位置，保证图案精准转移 。

Product Name: CANON PLA-501E Mask AlignerPurpose: It is used in the manufacturing of semiconductor devices. It can accurately position the photomask pattern on the target substrate (such as wafers up to 4 inches), suitable for the lithography process, and meets the production requirements of micro - electronic products such as chips and integrated circuits.Performance: The maximum alignment accuracy reaches 1.5µm. It is equipped with a 250W high - pressure mercury lamp, which generates a combination of g - line, h - line, and i - line wavelengths after filtering. The microscope can be scanned within ±10mm in both the x and y directions, facilitating the observation of the wafer and mask during operation. It supports automatic loading and uses a standard 4 - inch mask. It adopts step - and - repeat technology, with a maximum exposure field size of 10mmø and a maximum release angle of 10°. It has an autofocus function. The CCD camera scans to determine the optimal alignment position, and the x, y, θ control system precisely adjusts the stage position to ensure the accurate transfer of the pattern.