卡尔・休斯 KARL SUSS MICROTEC MJB-4 掩模对准曝光机用途：适用于科研机构、高校实验室以及小批量生产场景，可用于 MEMS、光电子（如 LED 生产）等领域，能处理标准晶圆、非标准基板（如混合、高频元件和易碎的 III-V 族材料），进行高精度光刻制程。性能：可处理直径达 100mm（4 英寸）的晶圆及小至 5×5mm 的基片，晶圆厚度上限 4mm。配备 200W、350W 或 500W（针对 UV250）的光源，曝光波长 350 - 450nm，有 UV250、UV300、UV400 及宽带光学元件可选。在 100mm 范围内光强均匀性达 ±3%，可选择恒定功率或恒定强度模式。分辨率在真空接触且采用 UV250 时低至 0.5μm L/S。使用 SUSS 推荐的晶圆标记，顶部对准（TSA）精度可达 0.5μm ，透射红外对准精度在特殊工艺条件下＜2μm，一般情况下＜5μm。支持接触式（硬接触、软接触、真空接触）和接近式（间隙可达 50μm）曝光模式 。

Product Name: KARL SUSS MICROTEC MJB - 4 Mask AlignerPurpose: It is suitable for research institutions, university laboratories, and small - batch production scenarios. It can be used in fields such as MEMS and optoelectronics (e.g., LED production). It can handle standard wafers and non - standard substrates (such as hybrids, high - frequency components, and fragile III - V materials) for high - precision lithography processes.Performance: It can process wafers with a diameter of up to 100mm (4 inches) and substrates as small as 5×5mm, with a maximum wafer thickness of 4mm. It is equipped with light sources of 200W, 350W, or 500W (for UV250), with an exposure wavelength range of 350 - 450nm. There are options for UV250, UV300, UV400, and broadband optical components. The light intensity uniformity within 100mm reaches ±3%, and it can select a constant - power or constant - intensity mode. The resolution can be as low as 0.5μm L/S in vacuum contact with UV250. Using SUSS - recommended wafer markers, the topside alignment (TSA) accuracy can reach 0.5μm, and the transmitted infrared alignment accuracy is < 2μm under special process conditions and < 5μm in general. It supports contact (hard contact, soft contact, vacuum contact) and proximity (with a gap of up to 50μm) exposure modes.