佳能 CANON FPA 1550 MARK IV-W 步进式光刻机用途：适用于半导体制造领域，可处理 4 - 6 英寸晶圆，用于将掩模图案精准转移至晶圆表面，完成光刻制程，满足芯片、传感器等微小精密部件的制造需求，尤其适用于成熟制程芯片生产。性能：曝光光源为 1kW 超高压汞灯，波长为 g 线（436nm）。数值孔径 0.48，分辨率≤0.7μm 。曝光区域 15mm，缩小倍率 5x。照明强度≤400mw，均匀性≥1.2%。掩模版对准光源为 g 线（436nm），采用图像处理法进行自动对准；晶圆对准光源为氦镉激光（442nm），对准精度（均值 + 3σ）≤0.15μm 。XY 工作台步进精度（均值 + 3σ）≤0.10μm 。自动对焦测量稳定性（3σ）≤0.15μm，重复性（3σ）≤0.17μm 。机械预对准精度（3σ）≤40μm 。

Product Name: CANON FPA 1550 MARK IV - W Wafer StepperPurpose: It is suitable for the semiconductor manufacturing field. It can process 4 - 6 - inch wafers, accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and meet the manufacturing needs of tiny and precise components such as chips and sensors, especially suitable for the production of chips in mature processes.Performance: The exposure light source is a 1kW ultra - high - pressure mercury lamp with a wavelength of g - line (436nm). The numerical aperture is 0.48, and the resolution is ≤0.7μm. The exposure area is 15mm, and the reduction ratio is 5x. The illumination intensity is ≤400mw, and the uniformity is ≥1.2%. The reticle alignment light source is g - line (436nm), and automatic alignment is carried out using the image processing method; the wafer alignment light source is a helium - cadmium laser (442nm), and the alignment accuracy (mean + 3σ) is ≤0.15μm. The stepping accuracy of the XY stage (mean + 3σ) is ≤0.10μm. The measurement stability (3σ) of autofocus is ≤0.15μm, and the repeatability (3σ) is ≤0.17μm. The mechanical pre - alignment accuracy (3σ) is ≤40μm.