佳能 CANON PLA 501 F 掩模对准曝光机用途：适用于半导体制造、集成电路生产等领域，主要用于对 4 英寸晶圆进行光刻作业，将掩模图案精准转移到晶圆表面，完成光刻制程。性能：采用 USHIO 250W 超高压汞灯作为光源，照明范围达 φ136mm，均匀性≤3% ，可用波长涵盖 g 线（436nm）、h 线（405nm）和 i 线（365nm）。曝光模式下，重复性 ±3%，曝光时间设置范围 0.1 至 59.9 秒。具备 xy 调整功能，晶圆对准行程为 φ10mm，粗调比例 4:1，微调比例 100:1，晶圆可通过电机驱动旋转 ±5°，掩模版也能旋转 ±5° 用于初始定位。支持接近式、硬接触、软接触 3 种印刷模式，接近式印刷间隙为 2µm 单位间隔，印刷间隙范围 0 至 48µm，对准间隙 0 至 98µm 。

Product Name: CANON PLA 501 F Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing and integrated circuit production. It is mainly used for lithography on 4 - inch wafers, accurately transferring the mask pattern onto the wafer surface to complete the lithography process.Performance: It uses a USHIO 250W ultra - high - pressure mercury lamp as the light source, with an illumination range of φ136mm and uniformity ≤3%. The available wavelengths cover g - line (436nm), h - line (405nm), and i - line (365nm). In the exposure mode, the repeatability is ±3%, and the exposure time setting range is 0.1 to 59.9 seconds. It has xy adjustment functions. The wafer alignment travel is φ10mm, with a coarse adjustment ratio of 4:1 and a fine adjustment ratio of 100:1. The wafer can be rotated ±5° by motor drive, and the photomask can also be rotated ±5° for initial positioning. It supports three printing modes: proximity, hard contact, and soft contact. The proximity printing gap is in 2µm unit intervals, with a printing gap range of 0 to 48µm and an alignment gap of 0 to 98µm.