佳能 CANON MPA-600/500 掩模对准曝光机用途：适用于半导体制造、集成电路生产、微机电系统研发等领域，可处理 4 - 6 英寸晶圆，用于将掩模图案精准转移至晶圆表面，完成光刻制程，满足芯片、传感器等微小精密部件的制造及科研需求。性能：以 MPA - 500 为例，采用 1:1 投影光学系统，搭配高性能汞灯作为曝光光源，适用于 i - line（365nm）光刻工艺，分辨率可达 0.5μm，套刻精度为 ±0.3μm。曝光区域为 15×15mm 。借助氦氖（633nm）激光束扫描实现自动或半自动对准，也支持手动对准。照明光源为 250W 超高压汞灯，照明均匀性≤±3%，照明强度≥12mW/cm²。支持接近式、硬接触、软接触等曝光模式。具备自动晶圆传输与对准系统，实现快速上料、精准定位与曝光，且有背面晶圆处理功能，可适配 5 英寸、6 英寸掩模版。MPA - 600 可处理 4 英寸、5 英寸、6 英寸晶圆，具备自动上料功能，可实现盒对盒操作 。

Product Name: CANON MPA-600/500 Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing, integrated circuit production, and micro - electromechanical systems R & D. It can process 4 - 6 - inch wafers, accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and meet the manufacturing and research needs of tiny and precise components such as chips and sensors.Performance: Taking the MPA - 500 as an example, it adopts a 1:1 projection optical system and is equipped with a high - performance mercury lamp as the exposure light source, suitable for the i - line (365nm) lithography process. The resolution can reach 0.5μm, and the overlay accuracy is ±0.3μm. The exposure area is 15×15mm. It realizes automatic or semi - automatic alignment by scanning with a helium - neon (633nm) laser beam and also supports manual alignment. The illumination light source is a 250W ultra - high - pressure mercury lamp, with illumination uniformity ≤±3% and illumination intensity ≥12mW/cm². It supports exposure modes such as proximity, hard contact, and soft contact. It has an automatic wafer transfer and alignment system for fast loading, precise positioning, and exposure, and also has a back - side wafer handling function and can be adapted to 5 - inch and 6 - inch masks. The MPA - 600 can process 4 - inch, 5 - inch, and 6 - inch wafers, has an automatic loading function, and can achieve cassette - to - cassette operation.