卡尔・休斯 KARL SUSS MICROTEC MA 100 掩模对准曝光机用途：适用于化合物半导体工艺，如高亮发光二极管（HB - LEDs）、功率器件、RF - MEMS 等领域，也用于先进封装，如 3D 圆晶级芯片尺寸封装等。可处理最大 4 英寸（部分资料显示可至 6 英寸）晶圆，能精准将掩模图案转移到晶圆表面，完成光刻制程。性能：基于经典设计，有良好工艺延展性。针对小尺寸晶圆优化，直接对准精度优于 0.7µm 。若选配底部对准功能（BSA），对准精确度优于 ±1.5 µm 。对准单元针对 LED 制造工艺调校，对透明及表面粗糙晶圆能有好的对比度。曝光光源等配置可满足光刻需求，接近式曝光分辨率可达 2.5μm，在自动对准模式下，每小时可曝光多达 145 片晶圆（首掩模模式下可达 215 片 / 小时） 。

Product Name: KARL SUSS MICROTEC MA 100 Mask AlignerPurpose: It is suitable for compound semiconductor processes, such as high - brightness light - emitting diodes (HB - LEDs), power devices, RF - MEMS and other fields, and is also used for advanced packaging, such as 3D wafer - level chip - size packaging. It can handle wafers up to 4 inches (some data shows up to 6 inches) in size and can accurately transfer the mask pattern onto the wafer surface to complete the lithography process.Performance: Based on the classic design, it has good process extensibility. Optimized for small - sized wafers, the direct alignment accuracy is better than 0.7µm. If the bottom - side alignment function (BSA) is selected, the alignment accuracy is better than ±1.5 µm. The alignment unit is adjusted for the LED manufacturing process, and good contrast can be achieved for transparent and rough - surface wafers. The exposure light source and other configurations can meet the lithography requirements. The proximity exposure resolution can reach 2.5μm. In the automatic alignment mode, up to 145 wafers can be exposed per hour (215 wafers per hour in the first - mask mode).