卡尔・休斯 KARL SUSS MICROTEC MA 8 掩模对准曝光机用途：适用于 MEMS、先进封装、三维封装、化合物半导体、功率器件、太阳能、纳米技术和晶圆片级光学系统等领域，可对最大 8 英寸并兼容 6 英寸、4 英寸、2 英寸及更小的晶圆和碎片进行光刻，实现掩模图案向晶圆的精准转移。性能：采用 LED 光源，波长 350 - 450nm，光强≥35 mW/cm²（UV365nm，8 英寸范围内），光强均匀性≤±2.5%（8 英寸范围 @365nm）。正面套刻精度≤±0.5um，背面套刻精度≤±1um。在 200mm 样品、胶厚 1um 时，真空接触下分辨率≤0.8um，软接触模式下分辨率≤2.5um，100um 曝光距离下分辨率≤8um。支持恒定功率、恒定剂量曝光，具备顶部和底部光学显微镜，可从晶圆两侧进行对准，支持硬接触、软接触、真空接触和接近式曝光模式 。

Product Name: KARL SUSS MICROTEC MA 8 Mask AlignerPurpose: It is suitable for fields such as MEMS, advanced packaging, 3D packaging, compound semiconductors, power devices, solar energy, nanotechnology, and wafer - level optical systems. It can perform lithography on wafers and fragments up to 8 inches and compatible with 6 - inch, 4 - inch, 2 - inch and smaller ones, achieving accurate transfer of mask patterns onto wafers.Performance: It uses an LED light source with a wavelength of 350 - 450nm, light intensity ≥ 35 mW/cm² (UV365nm within an 8 - inch range), and light intensity uniformity ≤ ±2.5% (within an 8 - inch range @ 365nm). The front - side overlay accuracy ≤ ±0.5um, and the back - side overlay accuracy ≤ ±1um. For a 200mm sample with a photoresist thickness of 1um, the resolution ≤ 0.8um in vacuum contact, ≤ 2.5um in soft - contact mode, and ≤ 8um at an exposure distance of 100um. It supports constant - power and constant - dose exposure, is equipped with top - side and bottom - side optical microscopes for alignment from both sides of the wafer, and supports hard - contact, soft - contact, vacuum - contact, and proximity exposure modes.