佳能 CANON PLA 501 FA 掩模对准曝光机用途：适用于半导体制造、微机电系统（MEMS）等领域，可对 4 - 6 英寸晶圆进行光刻作业，将掩模图案精准转移至晶圆表面，完成光刻制程，满足芯片、传感器等微小精密部件的生产及研发需求。性能：采用 1:1 投影光学系统，搭配汞灯曝光光源，适用于 i - line（365nm）光刻工艺，分辨率可达 0.5μm，套刻精度为 ±0.3μm。曝光区域为 15×15mm 。支持接近式、硬接触、软接触等曝光模式，采用氦氖（633nm）激光束扫描进行自动或半自动对准，手动对准也可实现。照明光源为 250W 超高压汞灯，照明均匀性≤±3%，照明强度≥12mW/cm²。自动晶圆传输与对准系统，可快速上料、精准定位与曝光 。

Product Name: CANON PLA 501 FA Mask AlignerPurpose: It is suitable for fields such as semiconductor manufacturing and micro - electromechanical systems (MEMS). It can perform lithography on 4 - 6 - inch wafers, accurately transfer the mask pattern onto the wafer surface to complete the lithography process, and meet the production and R & D requirements of tiny and precise components such as chips and sensors.Performance: It adopts a 1:1 projection optical system, is equipped with a mercury lamp exposure light source, and is suitable for the i - line (365nm) lithography process. The resolution can reach 0.5μm, and the overlay accuracy is ±0.3μm. The exposure area is 15×15mm. It supports exposure modes such as proximity, hard contact, and soft contact, and uses a helium - neon (633nm) laser beam for automatic or semi - automatic alignment. Manual alignment can also be achieved. The illumination light source is a 250W ultra - high - pressure mercury lamp, with illumination uniformity ≤±3% and illumination intensity ≥12mW/cm². It has an automatic wafer transfer and alignment system for fast loading, precise positioning, and exposure.