阿斯麦 ASML Twinscan AT 1100B 光刻机用途：用于半导体芯片制造，主要处理 200mm 和 300mm 晶圆，适用于 100nm 制程的大规模生产，也可用于更先进制程的前期研发。通过将掩模版上的电路图形精准曝光到涂有光刻胶的晶圆表面，完成光刻制程，广泛应用于逻辑芯片、存储芯片等制造领域。性能：采用 193nm ArF 激光光源，搭配数值孔径 0.75 的 Carl Zeiss Star Lith 1100 投影光学系统，可实现 100nm 分辨率 。具备双晶圆台技术，一个晶圆曝光时，另一晶圆可同步进行测量与对准，每小时能处理 93 片 300mm 晶圆 ，有效提升生产效率。套刻精度在全吞吐量下小于 20nm，满足 100nm 制程生产需求。配备 20W、4kHz 的 ArF 激光器与 Aerial II 照明器，支持高强度离轴和多极 Quasar 照明，可实现对芯片关键尺寸的精准控制，全晶圆关键尺寸均匀性低至 6.3nm（3σ） 。

Product Name: ASML Twinscan AT 1100B Lithography MachinePurpose: It is used in semiconductor chip manufacturing, mainly processing 200mm and 300mm wafers. It is suitable for mass production of 100nm processes and can also be used for pre - production R & D of more advanced processes. By accurately exposing the circuit patterns on the photomask onto the surface of the wafer coated with photoresist, the lithography process is completed, and it is widely used in the manufacturing fields of logic chips, memory chips, etc.Performance: It adopts a 193nm ArF laser light source and is equipped with a Carl Zeiss Star Lith 1100 projection optical system with a numerical aperture of 0.75, which can achieve a resolution of 100nm. It has a dual - wafer stage technology. While one wafer is being exposed, the other wafer can be measured and aligned simultaneously, and it can process 93 300mm wafers per hour, effectively improving production efficiency. The overlay accuracy is less than 20nm at full throughput, meeting the production requirements of the 100nm process. It is equipped with a 20W, 4kHz ArF laser and an Aerial II illuminator, supporting high - intensity off - axis and multi - pole Quasar illumination, which can achieve precise control of the critical dimensions of chips. The full - wafer critical dimension uniformity is as low as 6.3nm (3σ).