迈达斯 MIDAS MDA-400M 掩模对准曝光机用途：适用于半导体、微电子、生物器件和纳米科技等领域，可通过紫外光对正胶或负胶照射，经显影实现样品精细图形化。性能：配备 350W 紫外光源，光束波长 350 - 450nm，最大光束尺寸 4.25×4.25 英寸，均匀性≤3%（4 英寸），365nm 强度＞30mW/㎠ 。曝光时间 0.1 - 999.9 秒可调。有 XYZTheta 多维度手动样品台，XYZ 移动范围约 10mm，Theta±5°，对准精度约 1um，采用楔形补偿技术。支持真空接触、硬接触、软接触、渐进模式等光刻模式。真空接触模式分辨率 1um（硅晶圆上薄光刻胶），硬接触模式 2um，软接触模式 3um，20um 渐进模式 5um。可处理最大 4 英寸晶圆及小碎片样品，适配 5 英寸方形掩模版，配备双 CCD 显微镜和显示器，图形放大倍数 80X - 480X 。

Product Name: MIDAS MDA - 400M Mask AlignerPurpose: It is suitable for fields such as semiconductors, microelectronics, biological devices, and nanotechnology. It can irradiate positive or negative photoresists with ultraviolet light and achieve fine patterning of samples through development.Performance: Equipped with a 350W ultraviolet light source, the light beam wavelength is 350 - 450nm, the maximum beam size is 4.25×4.25 inches, the uniformity is ≤3% (4 inches), and the intensity at 365nm is ＞30mW/㎠. The exposure time is adjustable from 0.1 to 999.9 seconds. It has an XYZTheta multi - dimensional manual sample stage. The XYZ movement range is about 10mm, Theta is ±5°, and the alignment accuracy is about 1um. It adopts wedge compensation technology. It supports lithography modes such as vacuum contact, hard contact, soft contact, and proximity mode. The resolution in vacuum contact mode is 1um (thin photoresist on silicon wafer), 2um in hard contact mode, 3um in soft contact mode, and 5um in 20um proximity mode. It can process wafers up to 4 inches in size and small fragment samples, and is suitable for 5 - inch square masks. It is equipped with a dual - CCD microscope and a monitor, with a graphic magnification of 80X - 480X.