阿斯麦 ASML Stepper 光刻机用途：用于半导体芯片制造等领域，可对晶圆进行光刻操作，将掩模版上的电路图形转移到涂有光刻胶的晶圆表面，以完成芯片电路的制作。适用于多种芯片生产场景，在逻辑芯片、存储芯片以及传感器、MEMS、光子学等相关芯片制造中发挥作用 。性能：不同型号性能有差异，例如部分型号采用 i-line（365nm）光源，数值孔径（NA）可达 0.48，分辨率为 0.5µm，可用焦深 1.8µm ，图像缩放比为 5 倍 ，套刻精度 45nm ，最小曝光剂量 40mJ/cm² ，强度 400mW/cm² ，可处理 4 英寸（100mm）晶圆，技术上可配置为处理 6 英寸（150mm）和 8 英寸（200mm）晶圆 。也有型号能实现 0.25µm 分辨率，每小时可处理超 120 片六英寸圆形基板，图案套准精度小于 45nm，可适应直径达 4.5 英寸的方形基板及直径达 8 英寸、厚度达 2mm 的圆形基板 。

Product Name: ASML Stepper Lithography MachinePurpose: It is used in fields such as semiconductor chip manufacturing. It can perform lithography operations on wafers, transferring the circuit patterns on the photomask to the surface of the wafer coated with photoresist to complete the fabrication of chip circuits. It is suitable for a variety of chip production scenarios and plays a role in the manufacturing of logic chips, memory chips, as well as related chips such as sensors, MEMS, and photonics.Performance: The performance varies among different models. For example, some models use an i-line (365nm) light source, with a numerical aperture (NA) of up to 0.48, a resolution of 0.5µm, a usable depth of focus of 1.8µm, an image scale reduction ratio of 5 times, an overlay accuracy of 45nm, a minimum exposure dose of 40mJ/cm², an intensity of 400mW/cm², and can process 4-inch (100mm) wafers. Technically, it can be configured to process 6-inch (150mm) and 8-inch (200mm) wafers. There are also models that can achieve a resolution of 0.25µm, can process more than 120 six-inch round substrates per hour, with a pattern overlay accuracy of less than 45nm, and can adapt to square substrates with a diameter of up to 4.5 inches and round substrates with a diameter of up to 8 inches and a thickness of up to 2mm.