阿斯麦 ASML Lot of reticles（一批掩模版）用途：Lot of reticles 指一批用于光刻机的掩模版。掩模版在半导体芯片制造流程中起着关键作用，上面刻有芯片电路图形。在光刻环节，光刻机利用光源发出的光线透过（或反射）掩模版，将其图形投影到涂有光刻胶的晶圆表面，经过后续显影等工序，把电路图案转移到晶圆上，进而用于制造逻辑芯片、存储芯片等各类半导体芯片 。性能：不同类型掩模版性能有差异。用于深紫外（DUV）光刻的掩模版，能配合如 248nm KrF、193nm ArF 等光源，分辨率可达几十纳米。例如在特定光刻工艺中，可实现 50nm 分辨率 。极紫外（EUV）光刻的掩模版则是多层反射结构，利用光的干涉反射图案，能实现更精细的图形转移，满足 7nm 及以下先进制程需求，其反射率、图案精度等指标要求极高，可确保在高真空环境下，将超精细电路图案精准投射到晶圆上 。

Product Name: ASML Lot of reticles (a batch of photomasks)Purpose: Lot of reticles refers to a batch of photomasks used in lithography machines. Photomasks play a key role in the semiconductor chip manufacturing process, with chip circuit patterns engraved on them. In the lithography process, the lithography machine uses light emitted by the light source to pass through (or reflect off) the photomask, projecting its pattern onto the surface of the wafer coated with photoresist. After subsequent development and other processes, the circuit pattern is transferred to the wafer, and it is then used to manufacture various semiconductor chips such as logic chips and memory chips.Performance: Different types of photomasks have different performances. Photomasks used for deep ultraviolet (DUV) lithography can work with light sources such as 248nm KrF and 193nm ArF, and the resolution can reach several tens of nanometers. For example, in a specific lithography process, a resolution of 50nm can be achieved. The photomasks for extreme ultraviolet (EUV) lithography are multi - layer reflective structures that use the interference of light to reflect patterns. They can achieve more precise pattern transfer to meet the requirements of advanced processes of 7nm and below. Their reflectivity, pattern accuracy and other indicators have extremely high requirements, ensuring that ultra - fine circuit patterns are accurately projected onto the wafer in a high - vacuum environment.