卡尔・休斯 KARL SUSS MICROTEC MA 100E 掩模对准曝光机用途：专为高亮度 LED 制造而设计，也适用于化合物半导体、微机电系统（MEMS）等领域。可处理最大 4 英寸（100mm）的晶圆，能将掩模图案精准转移到晶圆表面，完成光刻制程，助力相关产品的生产与研发。性能：具备高产能，在自动对准模式下，每小时可曝光多达 145 片晶圆（首掩模模式下可达 215 片 / 小时）。曝光光学元件强度高，配合预对准功能，有效缩短工艺时间。接近式曝光分辨率低至 2.5μm，可提高生产良率。系统直接对准精度优于 0.7μm；若选配底部对准功能（BSA），对准精确度优于 ±1.5μm 。其对准单元针对 LED 制造工艺优化，对透明及表面粗糙的晶圆也能获得良好对比度，确保光刻的精准性 。

Product Name: KARL SUSS MICROTEC MA 100E Mask AlignerPurpose: Specifically designed for the manufacturing of high - brightness LEDs, it is also suitable for fields such as compound semiconductors and micro - electromechanical systems (MEMS). It can handle wafers up to 4 inches (100mm) in size and accurately transfer the mask pattern onto the wafer surface to complete the lithography process, facilitating the production and R & D of related products.Performance: It has high productivity. In the automatic alignment mode, it can expose up to 145 wafers per hour (215 wafers per hour in the first - mask mode). The exposure optics are of high intensity and, combined with the pre - alignment function, effectively shortens the process time. The proximity exposure resolution can reach as low as 2.5μm, which can improve the production yield. The system's direct alignment accuracy is better than 0.7μm; if the bottom - side alignment function (BSA) is selected, the alignment accuracy is better than ±1.5μm. Its alignment unit is optimized for the LED manufacturing process, and good contrast can be obtained even for transparent and rough - surface wafers, ensuring the accuracy of lithography.