尼康 NIKON S322F 干式 ArF 光刻机用途：用于半导体制造中对工艺要求极高的干式 ArF 光刻层的大规模生产。可满足下一代工艺设备研发和量产需求，尤其适用于对芯片精度和性能要求苛刻的逻辑芯片、存储芯片等制造场景。性能：基于成熟的 Stream Lign 平台打造。采用 193nm ArF 准分子激光光源，搭配数值孔径为 0.92 的镜头，分辨率≤65nm。具备出色的套刻精度，单机套刻精度（SMO）≤2nm，混配套刻精度（MMO）≤5nm 。最大曝光面积为 26×33mm，处理 300mm 晶圆时，每小时可曝光 96 次，吞吐量≥230 片晶圆 / 小时。还搭载鸟瞰控制系统，利用激光编码器和传统干涉仪精准确定晶圆位置，结合先进的镜头畸变和晶圆夹具热管理方案，优化聚焦控制。

Product Name: NIKON S322F Dry ArF Lithography ScannerPurpose: It is used for high - volume manufacturing of dry ArF lithography layers with extremely high process requirements in semiconductor manufacturing. It can meet the R & D and mass - production needs of next - generation process devices, especially suitable for manufacturing scenarios of logic chips, memory chips, etc., where high requirements are placed on chip accuracy and performance.Performance: Built on the proven Stream Lign platform. It uses a 193nm ArF excimer laser light source, equipped with a lens with a numerical aperture of 0.92, and the resolution is ≤65nm. It has excellent overlay accuracy, with single - machine overlay accuracy (SMO) ≤2nm and mix - and - match overlay accuracy (MMO) ≤5nm. The maximum exposure area is 26×33mm. When processing 300 - mm wafers, it can expose 96 times per hour, and the throughput is ≥230 wafers per hour. It is also equipped with a bird's - eye control system, which uses laser encoders and conventional interferometers to accurately determine the wafer position, combined with advanced lens distortion and wafer chuck thermal management solutions to optimize focus control.