应用材料 VeritySEM 2 关键尺寸扫描电子显微镜用途：广泛用于半导体制造领域，可精确测量芯片关键尺寸，助力控制芯片制造工艺，如在 45nm 及更先进制程中，对栅极、低 k 材料、光刻胶特征尺寸进行测量。也适用于材料科学中对样品微观结构的分析。技术原理：利用电子枪发射电子束，电子束经电磁透镜聚焦后扫描样品表面，与样品相互作用产生二次电子、背散射电子等信号，探测器收集并转化为图像信号，从而呈现样品微观形貌，以实现对关键尺寸的精准测量。性能：样品台分辨率达 1nm（xy 方向）/4nm（z 方向），精度 2µm。500eV 时图像分辨率为 1.8nm。支持 4 方向 12° 倾斜侧壁成像，可呈现 1:30 特征。加速电压范围 0.2kV - 2.5kV，提取电压最高 4kV，探针电流 5pA - 500pA。配备 4 个晶圆盒装载端口，可兼容 8 英寸晶圆 。Product Name: Applied Materials VeritySEM 2 Critical Dimension Scanning Electron MicroscopePurpose: It is widely used in the semiconductor manufacturing field. It can accurately measure the critical dimensions of chips and assist in controlling the chip manufacturing process. For example, in 45nm and more advanced processes, it measures the feature sizes of gates, low - k materials, and photoresists. It is also applicable to the analysis of sample microstructures in materials science.Technical Principle: An electron gun is used to emit an electron beam. The electron beam is focused by electromagnetic lenses and then scans the sample surface. It interacts with the sample to generate signals such as secondary electrons and backscattered electrons. The detector collects and converts these signals into image signals, thus presenting the microscopic morphology of the sample to achieve accurate measurement of critical dimensions.Performance: The sample stage resolution reaches 1nm (in the xy direction)/4nm (in the z direction) with an accuracy of 2µm. The image resolution is 1.8nm at 500eV. It supports 12°tilt side - wall imaging in 4 directions and can present 1:30 features. The acceleration voltage ranges from 0.2kV to 2.5kV, the extraction voltage is up to 4kV, and the probe current is 5pA - 500pA. It is equipped with 4 wafer cassette loading ports and is compatible with 8 - inch wafers.