赛默飞 FEI CLM - 3D 聚焦离子束 - 扫描电镜用途：在半导体研发与制造领域应用广泛，可用于半导体微观结构研究、器件失效分析、工艺优化、微纳加工等。例如进行电路修复、结构制备、器件原型制作以及满足复杂的微纳加工需求 。技术原理：融合聚焦离子束（FIB）与扫描电镜（SEM）技术。扫描电镜通过电子束扫描样品表面，利用电子与样品相互作用产生的二次电子、背散射电子等信号，提供高分辨率的表面形貌图像。聚焦离子束则借助高能离子束与样品表面相互作用，实现纳米级别的刻蚀、沉积和切割等高精度微加工操作 。性能：扫描电镜成像分辨率可达亚纳米级别，能清晰展现样品表面细微结构。聚焦离子束最小束斑直径极小，离子束束流可根据加工需求调整，满足不同精度的加工任务。具备 3D 分析功能，通过逐层剥离样品并采集图像，结合软件算法可重建样品三维结构模型 。Product Name: Thermo Fisher FEI CLM - 3D Focused Ion Beam - Scanning Electron MicroscopePurpose: It is widely used in the semiconductor R & D and manufacturing fields. It can be used for semiconductor microstructure research, device failure analysis, process optimization, nano - micro processing, etc. For example, it can be used for circuit repair, structure preparation, device prototyping, and to meet complex nano - micro processing requirements.Technical Principle: It integrates Focused Ion Beam (FIB) and Scanning Electron Microscope (SEM) technologies. The scanning electron microscope scans the sample surface with an electron beam and uses signals such as secondary electrons and backscattered electrons generated by the interaction between electrons and the sample to provide high - resolution surface morphology images. The focused ion beam realizes high - precision micro - processing operations such as nanoscale etching, deposition, and cutting through the interaction between a high - energy ion beam and the sample surface.Performance: The imaging resolution of the scanning electron microscope can reach the sub - nanometer level, clearly showing the fine structures on the sample surface. The minimum spot diameter of the focused ion beam is extremely small, and the ion beam current can be adjusted according to processing requirements to meet processing tasks with different precisions. It has a 3D analysis function. By layer - by - layer stripping the sample and collecting images, a 3D structure model of the sample can be reconstructed in combination with software algorithms.