日立 HITACHI NB5000 聚焦离子 / 电子束系统用途：主要用于高科技设备及高性能纳米材料的纳米级分析。在半导体、材料科学等领域，可进行高精度样品制备、高分辨率成像分析以及精密纳米加工，如制备用于透射电镜观察的超薄样品，分析材料微观结构、成分及缺陷 。技术原理：整合 40kV 镓离子聚焦离子束（FIB）柱与超高分辨率肖特基场发射扫描电子显微镜（FE - SEM）技术。FIB 发射离子束对样品进行加工，SEM 实时观察样品状态。低像差 FIB 光学系统等设计，保障了加工与成像的稳定性和精准度 。性能：FIB 加速电压 1 - 40kV，40kV 时最大束流超 50nA，40kV 下扫描离子显微镜（SIM）分辨率达 5nm ，放大倍率 ×60 - ×250,000，采用镓液态金属离子源及低像差两级静电透镜系统；SEM 加速电压 0.5 - 30kV，15kV 时分辨率 1.0nm，1kV 时分辨率 2.1nm ，放大倍率高倍模式 ×250 - ×800,000，低倍模式 ×70 - ×2,000，电子源为 ZrO/W 肖特基发射，采用三级电磁透镜缩小系统；配备常规偏心样品台，可选配用于 TEM 的超稳定样品台；具备专利微采样技术，可用于新开发的吸收电流成像辅助故障隔离 。Product Name: Hitachi HITACHI NB5000 Focused Ion/Electron Beam SystemPurpose: It is mainly used for nano - level analysis of high - tech equipment and high - performance nanomaterials. In fields such as semiconductors and materials science, it can be used for high - precision sample preparation, high - resolution imaging analysis, and precision nano - fabrication. For example, it can prepare ultrathin samples for transmission electron microscopy observation, and analyze the microstructure, composition, and defects of materials.Technical Principle: It integrates a 40kV gallium ion focused ion beam (FIB) column with an ultra - high - resolution Schottky field - emission scanning electron microscope (FE - SEM) technology. The FIB emits an ion beam to process the sample, and the SEM observes the sample state in real - time. Designs such as the low - aberration FIB optical system ensure the stability and accuracy of processing and imaging.Performance: The FIB acceleration voltage is 1 - 40 kV, with a maximum beam current of over 50 nA at 40 kV. The scanning ion microscope (SIM) resolution reaches 5 nm at 40 kV, with a magnification of ×60 - ×250,000. It uses a gallium liquid metal ion source and a low - aberration two - stage electrostatic lens system. The SEM acceleration voltage is 0.5 - 30 kV, with a resolution of 1.0 nm at 15 kV and 2.1 nm at 1 kV. The magnification is ×250 - ×800,000 in high - magnification mode and ×70 - ×2,000 in low - magnification mode. The electron source is ZrO/W Schottky emission, and a three - stage electromagnetic lens reduction system is adopted. It is equipped with a conventional off - center sample stage, and an ultra - stable sample stage for TEM can be optionally configured. It has patented micro - sampling technology, which can be used for the newly developed absorbed current imaging to assist in fault isolation.