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日立 HITACHI S-3400N Type II 钨灯丝电镜

库存状态:现货

日立 HITACHI S-3400N Type II用途:适用于材料科学、生命科学、半导体等多领域。可用于观察材料微观结构,如金属、陶瓷等内部组织;研究生物样品超微形态,像细胞、微生物的精细结构;分析半导体芯片细微构造;对材料表面微区成分进行定性和半定量分析,还能在无需对不导电、含水等特殊样品进行复杂预处理的情况下直接观察 。技术原理:通过钨灯丝电子枪发射电子束,电子束经加速电压(0.3 - 30kV)加速后,由磁透镜聚焦到样品表面,并在偏转线圈作用下进行光栅扫描。电子与样品相互作用产生二次电子、背散射电子等信号,探测器收集这些信号并转化为电信号,经放大处理成像。其可变压力(VP)模式,通过向样品室充入压力为 6 - 270Pa 的气体,利用气体分子产生的正离子消除荷电,实现特殊样品直接观测 。性能:二次电子像分辨率方面,高真空模式下 30kV 时为 3.0nm,3kV 时为 10nm;背散射电子像分辨率在低真空(6Pa)模式下为 4.0nm;放大倍率为 5 - 300,000 倍;拥有大尺寸样品室,可容纳直径达 200mm 的样品,样品台为 5 轴马达驱动,X 向行程 0 - 100mm,Y 向行程 0 - 50mm,Z 向行程 5 - 65mm,倾斜角度 - 20° 至 + 90°,旋转 360°;标准配备涡轮分子泵,抽气高效,能快速达到工作真空要求 。Product Name: Hitachi HITACHI S-3400N Type IIPurpose: It is suitable for multiple fields such as materials science, life sciences, and semiconductors. It can be used to observe the microstructure of materials, such as the internal structure of metals and ceramics; study the ultrastructure of biological samples, like the fine structure of cells and microorganisms; analyze the fine structure of semiconductor chips; perform qualitative and semi - quantitative analysis of the micro - area composition on the material surface, and can directly observe non - conductive, water - containing and other special samples without complex pretreatment.Technical Principle: The electron beam is emitted by a tungsten filament electron gun. After being accelerated by the acceleration voltage (0.3 - 30kV), the electron beam is focused on the sample surface by a magnetic lens and undergoes raster scanning under the action of a deflection coil. The electrons interact with the sample to generate signals such as secondary electrons and backscattered electrons. The detector collects these signals and converts them into electrical signals, which are then amplified and processed for imaging. Its variable pressure (VP) mode fills the sample chamber with gas at a pressure of 6 - 270Pa. Positive ions generated by gas molecules are used to eliminate charging, enabling the direct observation of special samples.Performance: In terms of secondary electron image resolution, it is 3.0nm at 30kV and 10nm at 3kV in high - vacuum mode. The backscattered electron image resolution is 4.0nm in low - vacuum (6Pa) mode. The magnification is 5 - 300,000 times. It has a large - sized sample chamber that can accommodate samples with a diameter of up to 200mm. The sample stage is 5 - axis motor - driven, with an X - travel of 0 - 100mm, a Y - travel of 0 - 50mm, a Z - travel of 5 - 65mm, a tilt angle of - 20° to + 90°, and a rotation of 360°. It is equipped with a turbo - molecular pump as standard, which has high pumping efficiency and can quickly reach the working vacuum requirement.

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