日立 HITACHI NX2000 FIB - SEM 三束系统用途：用于高科技设备及高性能纳米材料的评价与分析。在半导体、纳米技术、材料科学、医学与生物学等领域，可进行样品断面观察、制备高品位透射电子显微镜（TEM）用样品，分析微观结构、组成及缺陷 。技术原理：整合高性能聚焦离子束（FIB）技术与高分辨扫描电子显微镜（SEM）技术。通过 FIB 发射离子束对样品加工，SEM 用于实时观察。加工方向控制技术可调整样品姿态，Triple Beam（选配）技术通过离子束、电子束及 Ar 离子束协同，提升加工效率并减少 FIB 损伤 。性能：FIB 加速电压 0.5 - 30 kV，最大束流 100 nA，30 kV 时分辨率 4 nm，2 kV 时 60 nm ；SEM 加速电压 0.5 - 30 kV，5 kV 时分辨率 2.8 nm，1 kV 时 3.5 nm ；可制备小于 20 nm 的超薄样品，支持大型样品（~200mmφ），具备高精度样品台，能抑制窗帘效应，制作厚度均一薄膜 。Product Name: Hitachi HITACHI NX2000 FIB - SEM Triple Beam SystemPurpose: It is used for the evaluation and analysis of high - tech equipment and high - performance nanomaterials. In fields such as semiconductors, nanotechnology, materials science, medicine, and biology, it can be used for sample cross - section observation, preparation of high - quality transmission electron microscope (TEM) samples, and analysis of microstructures, compositions, and defects.Technical Principle: It integrates high - performance focused ion beam (FIB) technology and high - resolution scanning electron microscope (SEM) technology. The FIB emits an ion beam to process the sample, and the SEM is used for real - time observation. The processing direction control technology can adjust the sample posture. The Triple Beam (optional) technology, through the cooperation of the ion beam, electron beam, and Ar ion beam, improves processing efficiency and reduces FIB damage.Performance: The FIB acceleration voltage ranges from 0.5 - 30 kV, the maximum beam current is 100 nA, the resolution is 4 nm at 30 kV and 60 nm at 2 kV. The SEM acceleration voltage ranges from 0.5 - 30 kV, the resolution is 2.8 nm at 5 kV and 3.5 nm at 1 kV. It can prepare ultrathin samples less than 20 nm, support large - sized samples (~200mmφ), has a high - precision sample stage, can suppress the curtain effect, and produce uniformly - thick films.