日立 HITACHI S-4500 Type I用途：在材料科学、生命科学、半导体等领域应用广泛，可用于观察材料微观结构、生物样品超微形态以及半导体芯片细微构造，也能对材料表面微区成分进行定性与定量分析 。技术原理：冷阴极场发射电子枪发射电子束，电子束经加速电压加速后，通过磁透镜聚焦至样品表面，并在偏转线圈作用下进行光栅扫描。电子与样品相互作用，产生二次电子、背散射电子等信号，探测器收集这些信号并转化为电信号，经放大处理后成像 。性能：分辨率上，15kV、4mm 工作距离时为 1.5nm，1kV、3mm 工作距离时为 4.0nm；放大倍率高倍模式下是 50 - 500,000 倍，低倍模式为 20 - 1,500 倍；加速电压 0.5 - 30kV（以 0.1kV 为步长调节）；提取电压 0 - 6.5kV；样品台为 Type I 型，X 向移动 0 - 100mm（连续），Y 向移动 0 - 50mm（连续），Z 向移动 3 - 33mm（连续），倾斜 - 5° 至 + 60°，旋转 360°（连续），最大样品直径 150mm 。Product Name: Hitachi HITACHI S-4500 Type IPurpose: It is widely used in fields such as materials science, life sciences, and semiconductors. It can be used to observe the microstructure of materials, the ultrastructure of biological samples, and the fine structure of semiconductor chips, and also perform qualitative and quantitative analysis of the micro-area composition on the material surface.Technical Principle: The cold cathode field emission electron gun emits an electron beam. The electron beam is accelerated by the acceleration voltage, focused on the sample surface through a magnetic lens, and undergoes raster scanning under the action of a deflection coil. The electrons interact with the sample to generate signals such as secondary electrons and backscattered electrons. The detector collects these signals and converts them into electrical signals, which are then amplified and processed for imaging.Performance: In terms of resolution, it is 1.5nm at 15kV and 4mm working distance, and 4.0nm at 1kV and 3mm working distance. The magnification is 50 - 500,000 times in high - magnification mode and 20 - 1,500 times in low - magnification mode. The acceleration voltage is 0.5 - 30kV (adjusted in steps of 0.1kV). The extraction voltage is 0 - 6.5kV. The sample stage is of Type I, with X - movement of 0 - 100mm (continuous), Y - movement of 0 - 50mm (continuous), Z - movement of 3 - 33mm (continuous), tilt of - 5° to + 60°, rotation of 360° (continuous), and the maximum sample diameter is 150mm.