赛默飞 FEI Inspect S50 扫描电子显微镜用途：用于材料科学、半导体、生物医学等领域，可观察材料微观结构、分析半导体器件缺陷、研究生物样品微观特征，助力科研与工业质量检测。技术原理：通过电子枪发射电子束，经电磁透镜聚焦后扫描样品表面。电子与样品相互作用产生二次电子、背散射电子等信号，探测器收集这些信号并转化为图像，以此呈现样品表面形貌。具备高真空、低真空等多种模式，适应不同样品需求 。性能：二次电子成像分辨率，高真空模式下 30kV 时为 3.0nm、3kV 时为 8nm；高真空减速模式 3kV 时 7nm（可选项）；低真空模式 30kV 时 3.0nm、3kV 时 10nm 。背散射电子成像 30kV 时分辨率 4.0nm 。加速电压 200V - 30kV 连续可调 。配备 50x50mm 4 轴马达驱动全对中样品台，可安装能谱仪等进行成分分析。放大倍数范围 20 - 2000X 。Product Name: Thermo Fisher FEI Inspect S50 Scanning Electron MicroscopePurpose: It is used in fields such as materials science, semiconductors, and biomedicine. It can observe the microstructure of materials, analyze semiconductor device defects, and study the microscopic characteristics of biological samples, facilitating scientific research and industrial quality inspection.Technical Principle: An electron beam is emitted by an electron gun and focused by electromagnetic lenses before scanning the sample surface. The interaction between electrons and the sample generates signals such as secondary electrons and backscattered electrons. These signals are collected by detectors and converted into images to present the surface morphology of the sample. It has multiple modes such as high vacuum and low vacuum to meet the needs of different samples.Performance: For secondary electron imaging resolution, in high - vacuum mode, it is 3.0nm at 30kV and 8nm at 3kV; in high - vacuum deceleration mode, it is 7nm at 3kV (optional); in low - vacuum mode, it is 3.0nm at 30kV and 10nm at 3kV. The resolution of backscattered electron imaging is 4.0nm at 30kV. The acceleration voltage is continuously adjustable from 200V to 30kV. It is equipped with a 50x50mm 4 - axis motor - driven fully centered sample stage and can be installed with an energy spectrometer for composition analysis. The magnification range is 20 - 2000X.