https://rc0.zihu.com/g5/M00/40/54/CgAGbGiTJMGAG2uWAAFVf-I219E89.jpeg,https://rc0.zihu.com/g5/M00/40/54/CgAGbGiTJMWAcutvAAI5DKG5a4881.jpeg,https://rc0.zihu.com/g5/M00/40/54/CgAGbGiTJMWAIdKMAAEGcC4cdC029.jpeg,https://rc0.zihu.com/g5/M00/40/54/CgAGbGiTJMaAR9cCAAGuLj6hcuY85.jpeg
https://rc0.zihu.com/g5/M00/40/54/CgAGbGiTJMGAG2uWAAFVf-I219E89.jpeg
赛默飞 FEI Altura 835 聚焦离子束电镜

库存状态:现货

赛默飞 FEI Altura 835 双束系统用途:主要用于半导体领域,利用离子束对半导体晶圆进行铣削和制备,配合扫描电镜完成缺陷与质量控制检测。也适用于材料科学等领域的样品微观分析与加工 。技术原理:融合聚焦离子束(FIB)与扫描电镜(SEM)技术。聚焦离子束通过高能离子束与样品表面相互作用,实现铣削、切割等操作,用于样品的加工与制备;扫描电镜通过电子束扫描样品,收集二次电子、背散射电子等信号成像,提供样品表面微观结构信息。设备带有 “负载锁”,可将半导体晶圆转移至样品台 。性能:加速电压范围 500V - 30kV 。配备 Magnum 离子柱。样品台为全电动旋转倾斜台,倾斜角度范围 - 5° 至 55° 。具备搜索模式和超高分辨率模式,可进行气体注入(如铂注入)、轮廓蚀刻、XeF₂蚀刻等操作,能容纳最大 200mm 的晶圆及芯片碎片 。Product Name: Thermo Fisher FEI Altura 835 Dual Beam SystemPurpose: It is mainly used in the semiconductor field. The ion beam is used to mill and prepare semiconductor wafers, and it works with a scanning electron microscope to complete defect and quality control inspections. It is also suitable for microscopic analysis and processing of samples in fields such as materials science.Technical Principle: It integrates Focused Ion Beam (FIB) and Scanning Electron Microscope (SEM) technologies. The focused ion beam realizes operations such as milling and cutting through the interaction between a high - energy ion beam and the sample surface, which is used for sample processing and preparation. The scanning electron microscope scans the sample with an electron beam and collects signals such as secondary electrons and backscattered electrons for imaging, providing microscopic structure information on the sample surface. The equipment is equipped with a "load lock" that can transfer semiconductor wafers to the sample stage.Performance: The acceleration voltage range is 500V - 30kV. It is equipped with a Magnum ion column. The sample stage is a fully motorized rotary tilt stage with a tilt angle range from - 5° to 55°. It has a search mode and an ultra - high - resolution mode, and can perform operations such as gas injection (such as platinum injection), delineation etch, XeF₂ etch, etc. It can accommodate wafers and chip fragments with a maximum size of 200mm.

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