日立 HITACHI S-4160用途：适用于材料、生物、半导体等多领域研究。可用于观察材料微观结构，分析生物样品超微形态，探究半导体芯片细微构造，还能对材料表面微区成分进行定性与定量分析。技术原理：利用冷阴极场发射电子枪发射电子束，电子束经加速电压加速后，由磁透镜聚焦至样品表面，并在偏转线圈作用下进行光栅扫描。电子与样品相互作用产生二次电子、背散射电子等信号，探测器收集这些信号并转化为电信号，经放大处理成像。性能：分辨率方面，15kV、12mm 工作距离时为 1.5nm，1kV、2.5mm 工作距离时为 2.5nm；放大倍率在高倍模式下为 100 - 500,000 倍，低倍模式为 20 - 2,000 倍；加速电压范围 0.5 - 30kV，以 0.1kV 为增量调节；提取电压 0 - 6.5kV；样品台可实现 Z 向 2.5 - 30mm（连续）移动、倾斜 5 - 60°、旋转 360°，X 向移动 0 - 100mm，Y 向移动 0 - 50mm（连续），可承载最大直径 150mm 的样品 。Product Name: Hitachi HITACHI S-4160Purpose: It is suitable for research in multiple fields such as materials, biology and semiconductors. It can be used to observe the microstructure of materials, analyze the ultrastructure of biological samples, explore the fine structure of semiconductor chips, and also perform qualitative and quantitative analysis of the micro-area composition on the material surface.Technical Principle: A cold cathode field emission electron gun is used to emit an electron beam. The electron beam is accelerated by the acceleration voltage, focused on the sample surface by the magnetic lens, and undergoes raster scanning under the action of the deflection coil. The electrons interact with the sample to generate signals such as secondary electrons and backscattered electrons. The detector collects these signals and converts them into electrical signals, which are then amplified and processed for imaging.Performance: In terms of resolution, it is 1.5nm at 15kV and 12mm working distance, and 2.5nm at 1kV and 2.5mm working distance. The magnification is 100 - 500,000 times in high - magnification mode and 20 - 2,000 times in low - magnification mode. The acceleration voltage ranges from 0.5 - 30kV and can be adjusted in increments of 0.1kV. The extraction voltage is 0 - 6.5kV. The sample stage can achieve Z - movement of 2.5 - 30mm (continuous), tilt of 5 - 60°, rotation of 360°, X - movement of 0 - 100mm, Y - movement of 0 - 50mm (continuous), and can accommodate a sample with a maximum diameter of 150mm.