赛默飞 FEI 聚焦离子束扫描电子显微镜（FIB - SEM）用途：用于材料科学、半导体、生物医学等多领域。可对材料微观结构进行高分辨率成像，为 TEM 制备高质量超薄样品，进行三维断层成像、微观结构分析、微区成分分析，还能对样品进行纳米级加工，如精确刻蚀、材料沉积等 。技术原理：将聚焦离子束（FIB）的精确样品修饰与扫描电子显微镜（SEM）的高分辨率成像相结合。FIB 通过高能离子束与材料表面相互作用，实现溅射刻蚀、离子植入等操作，SEM 则利用电子束扫描样品产生二次电子、背散射电子等信号成像。设备包含离子柱、电子柱，可搭配气体注入系统辅助材料沉积或刻蚀，样品台能多角度旋转与倾斜 。性能：成像分辨率可达亚纳米级。离子束束斑尺寸可达 5 纳米，束流范围 1 皮安至几十纳安。可精确铣削样品，粗铣削高电流（如 10 nA）快速移除材料，精细铣削低电流（如 100 pA）抛光表面。结合软件可实现三维断层成像，逐层铣削精度达几十纳米 。Product Name: Thermo Fisher FEI Focused Ion Beam Scanning Electron Microscope (FIB - SEM)Purpose: It is used in multiple fields such as materials science, semiconductors, and biomedicine. It can perform high - resolution imaging of material microstructures, prepare high - quality ultra - thin samples for TEM, conduct 3D tomography, microstructure analysis, micro - area composition analysis, and also carry out nano - scale processing on samples, such as precise etching and material deposition.Technical Principle: It combines the precise sample modification of a focused ion beam (FIB) with the high - resolution imaging of a scanning electron microscope (SEM). The FIB interacts with the material surface through a high - energy ion beam to achieve operations such as sputtering etching and ion implantation, while the SEM uses an electron beam to scan the sample to generate signals such as secondary electrons and backscattered electrons for imaging. The equipment includes an ion column and an electron column, and can be equipped with a gas injection system to assist in material deposition or etching. The sample stage can rotate and tilt at multiple angles.Performance: The imaging resolution can reach sub - nanometer level. The ion beam spot size can reach 5 nanometers, and the beam current range is from 1 picoampere to several tens of nanoamperes. It can precisely mill samples, with high current (such as 10 nA) for rough milling to quickly remove materials and low current (such as 100 pA) for fine milling to polish the surface. Combined with software, it can achieve 3D tomography with a layer - by - layer milling accuracy of several tens of nanometers.