赛默飞 FEI Inspect-F 场发射扫描电子显微镜用途：适用于材料科学、半导体等领域，可对金属、非金属、半导体器件等样品进行形貌观察与微区成分分析，帮助研究人员了解材料微观结构、分析器件缺陷等，也可用于纳米材料的特性研究。技术原理：利用场发射电子枪发射电子束，经电磁透镜聚焦后扫描样品表面，电子与样品相互作用产生二次电子、背散射电子等信号，通过探测器收集信号并转化为图像，从而呈现样品表面形貌等信息。性能：冷场发射电子枪，二次电子图像分辨率在 30kV 时为 1.0nm，1kV 时为 3.0nm，减速模式下 1kV 为 2.3nm，200V 为 3.1nm；背散射电子图像分辨率 30kV 时为 2.5nm。加速电压 200V-30kV 连续可调，电子束流最大可达 200nA。配备 50x50mm 4 轴马达驱动全对中样品台，可安装能谱仪等附件1。Product Name：Thermo Fisher FEI Inspect - F Field Emission Scanning Electron MicroscopePurpose：It is suitable for materials science, semiconductor and other fields. It can be used for the morphology observation and micro - area composition analysis of samples such as metals, non - metals and semiconductor devices, helping researchers understand the material microstructure, analyze device defects, and can also be used for the characteristic research of nanomaterials.Technical Principle：The field emission electron gun is used to emit an electron beam, which is focused by an electromagnetic lens and then scans the sample surface. The interaction between electrons and the sample produces signals such as secondary electrons and back - scattered electrons. The detector collects these signals and converts them into images, thus presenting the surface morphology and other information of the sample.Performance：Cold field emission electron gun. The secondary electron image resolution is 1.0nm at 30kV and 3.0nm at 1kV, and in the deceleration mode, it is 2.3nm at 1kV and 3.1nm at 200V. The back - scattered electron image resolution is 2.5nm at 30kV. The acceleration voltage is continuously adjustable from 200V to 30kV, and the electron beam current can reach up to 200nA. It is equipped with a 50x50mm 4 - axis motor - driven fully centered sample stage, and can be equipped with accessories such as an energy spectrometer1.