日立 HITACHI FB-2100用途：用于半导体及其他先进材料的透射和扫描电镜观察，能快速精确地制备样品。可在材料上进行微米和纳米级切割，为工程师、物理及生命科学家制备软硬材料的透射电镜样品。技术原理：运用聚焦离子束技术，通过液态镓金属离子源发射离子束，经电磁透镜等系统聚焦后作用于样品，利用离子与物质的相互作用对样品进行加工和成像。性能：加速电压 10 - 40kV（可选 2kV 和 5kV），40kV 时最大束流达 60nA（标准）或 40nA，最大束流密度 50A/cm²（40kV）；扫描离子显微镜（SIM）图像分辨率在 40kV 时为 6nm 或更优；放大倍数范围 700x 至 200,000x（可设置至 300,000x）；具备钨、碳沉积系统；样品台可兼容扫描电镜和透射电镜样品夹；加工速度在束斑直径 0.2μm 时达 1.0μm/s 或更高 。Product Name: HITACHI FB-2100Purpose: It is used for transmission and scanning electron microscopy observation of semiconductors and other advanced materials, enabling rapid and precise sample preparation. It can make micrometer and nanometer - sized cuts in materials and prepare TEM samples of hard and soft materials for engineers, physical and life scientists.Technical Principle: It uses focused ion beam technology. A liquid gallium metal ion source emits an ion beam, which is focused by systems such as electromagnetic lenses and then acts on the sample. The interaction between ions and matter is used for sample processing and imaging.Performance: The accelerating voltage ranges from 10 - 40 kV (2 kV and 5 kV are optional). The maximum beam current reaches 60 nA (standard) or 40 nA at 40 kV, and the maximum beam current density is 50 A/cm² at 40 kV. The scanning ion microscope (SIM) image resolution is 6 nm or better at 40 kV. The magnification range is from 700x to 200,000x (can be set up to 300,000x). It has tungsten and carbon deposition systems. The sample stage is compatible with SEM and TEM sample holders. The processing speed reaches 1.0 μm/s or higher when the beam spot diameter is 0.2 μm.