AMAT/APPLIED MATERIALS ATON 1600 等离子增强化学气相沉积设备用途：主要用于半导体制造与太阳能电池生产领域。在半导体制造中，可在晶圆表面沉积高质量的薄膜，用于晶体管、集成电路等结构；太阳能电池生产方面，能够在 370mm x 470mm 的面板上处理至少两个太阳能电池基板，助力制造高品质太阳能电池 。性能：设备拥有先进的真空系统，能将反应性气体转化为固态薄膜。具备四个装载端口、两个真空负载锁和五个腔室。两个蚀刻腔室，A 腔主要蚀刻硝酸硅（SiN），可用气体有三氟甲烷（CHF₃）等；B 腔蚀刻铝（Al）等，有多种蚀刻气体可选。三个沉积腔室为单面板腔室，能沉积 SiN、非晶硅等不同材料，各腔室配备不同的反应气体。处理基板时，温度范围为 50°C 至 800°C，压力范围 0.5 至 200 mtorr 。

Product Name: AMAT/APPLIED MATERIALS ATON 1600 Plasma - Enhanced Chemical Vapor Deposition EquipmentPurpose: It is mainly used in the semiconductor manufacturing and solar cell production fields. In semiconductor manufacturing, it can deposit high - quality thin films on the surface of wafers for structures such as transistors and integrated circuits. In solar cell production, it can process at least two solar cell substrates on a 370mm x 470mm panel, contributing to the manufacture of high - quality solar cells.Performance: The equipment has an advanced vacuum system that can convert reactive gases into solid films. It has four loading ports, two vacuum load locks, and five chambers. There are two etching chambers. Chamber A is mainly used to etch silicon nitrate (SiN), and available gases include trifluoromethane (CHF₃), etc. Chamber B is used to etch aluminum (Al), etc., with a variety of etching gases available. The three deposition chambers are single - panel chambers, which can deposit different materials such as SiN and amorphous silicon, and each chamber is equipped with different reaction gases. When processing substrates, the temperature range is 50°C to 800°C, and the pressure range is 0.5 to 200 mtorr.