CHA SE 600 RAP 高真空电子束蒸发系统13。用途：主要用于在各类基底材料上沉积金属、合金等薄膜，适用于半导体制造、光学镀膜、材料研究等领域，可制备高质量薄膜图层，满足科研与工业生产需求。性能：基底板通常为 20 英寸，可容纳多达 15 个用于仪器仪表、控制和旋转运动的馈通装置9。常配备 19.5 英寸直径的钟罩和行星夹具，能放置 18 片 4 英寸晶圆9。平均抽气时间少于 30 分钟，每小时产量超 54 片晶圆9。配备晶体沉积监测仪，具备自动或手动阀门控制功能。采用扩散泵和前级泵，搭配电动提升装置。电子束蒸发镀典型工艺参数为真空度 2.6×10⁻⁴Pa、蒸发速率 20—25Å/s 等15。

Product Name: CHA SE 600 RAP High - Vacuum Electron - Beam Evaporation System13.Purpose: It is mainly used for depositing metal, alloy and other thin films on various substrate materials. It is suitable for semiconductor manufacturing, optical coating, materials research and other fields, and can prepare high - quality thin - film layers to meet the needs of scientific research and industrial production.Performance: The baseplate is usually 20 inches, which can accommodate up to 15 feed - throughs for instrumentation, control and rotary motion9. It is often equipped with a 19.5 - inch - diameter bell jar and a planetary fixture, which can hold 18 4 - inch wafers9. The average pump - down time is less than 30 minutes, and the output can exceed 54 wafers per hour9. It is equipped with a crystal deposition monitor and has automatic or manual valve control functions. It uses a diffusion pump and a roughing pump, and is equipped with an electric lifting device. The typical process parameters of electron - beam evaporation coating are a vacuum degree of 2.6×10⁻⁴Pa, an evaporation rate of 20 - 25Å/s, etc15.