ANELVA C - 7100 物理气相沉积（PVD）溅射设备用途：适用于 8 英寸晶圆的相关制造工艺，在化合物半导体领域，可用于砷化镓、氮化镓等材料的金属电极沉积；在功率 IC 和 MEMS 制造中，能进行关键薄膜的沉积工作 。性能：采用先进的旋转磁控阴极与直流电源，直流电源输出电流可在 0.1 至 200A 范围调节，最高电压 5kV 。具备 600mm x 600mm 的大尺寸溅射区域。X、Y、Z 轴倾斜角度最大可调节至 40 度，便于在曲面及不规则表面精准沉积厚薄膜层 。腔室温度可通过集成温度控制器精准调控，压力控制器能将腔内压力在 1 至 50mbar 范围调节 。

Product Name: ANELVA C - 7100 Physical Vapor Deposition (PVD) Sputtering EquipmentPurpose: It is suitable for the manufacturing processes related to 8 - inch wafers. In the field of compound semiconductors, it can be used for the deposition of metal electrodes of materials such as gallium arsenide and gallium nitride. In the manufacturing of power ICs and MEMS, it can carry out the deposition of key thin films.Performance: It adopts advanced rotating magnetron cathodes and DC power supplies. The output current of the DC power supply can be adjusted in the range of 0.1 to 200A, with a maximum voltage of 5kV. It has a large sputtering area of 600mm x 600mm. The tilt angles of the X, Y, and Z axes can be adjusted up to 40 degrees at most, which is convenient for precise deposition of thick and thin film layers on curved and irregular surfaces. The temperature of the chamber can be precisely controlled through the integrated temperature controller, and the pressure controller can adjust the pressure in the chamber in the range of 1 to 50mbar.