爱发科 ULVAC Entron W 200T6用途：这是一款物理气相沉积（PVD）溅射设备，适用于半导体制造领域。可用于功率器件如绝缘栅双极型晶体管（IGBT）等的生产，通过溅射工艺在晶圆上沉积各类薄膜。例如在芯片制造中，能够在硅片表面精准沉积镍（Ni）、氮化钛（TiN）、钴（Co）等薄膜，满足不同半导体器件的工艺需求 。性能：该设备适用于 8 英寸（200mm）晶圆。可配置 6 个物理气相沉积腔室，包括 1 个化学干法预清洗腔室、1 个退火腔室用于化学干法预清洗后的退火处理、1 个镀镍（环形镍）腔室、1 个普通镀氮化钛腔室和 1 个普通镀钴腔室。虽然没有更多公开的具体性能参数，但从配置推测，它能实现较为复杂且多样化的薄膜沉积工艺，满足半导体制造的高精度要求 。

Product Name: ULVAC Entron W 200T6Purpose: This is a Physical Vapor Deposition (PVD) sputtering device, suitable for the semiconductor manufacturing field. It can be used in the production of power devices such as Insulated Gate Bipolar Transistors (IGBTs). Through the sputtering process, various thin films are deposited on wafers. For example, in chip manufacturing, thin films of nickel (Ni), titanium nitride (TiN), cobalt (Co), etc. can be accurately deposited on the surface of silicon wafers to meet the process requirements of different semiconductor devices.Performance: This device is suitable for 8 - inch (200mm) wafers. It can be configured with 6 PVD chambers, including 1 chemical dry pre - clean chamber, 1 anneal chamber for post - anneal after chemical dry pre - clean, 1 PVD - Ni (ring - Ni) chamber, 1 PVD - TiN (normal) chamber, and 1 PVD Co (normal) chamber. Although there are no more publicly available specific performance parameters, from the configuration, it can be inferred that it can achieve relatively complex and diverse thin - film deposition processes to meet the high - precision requirements of semiconductor manufacturing.