爱发科 ULVAC Ei - 5K用途：这是一款批次型高真空蒸发系统，适用于研发及小批量生产场景。能在各类基板上沉积金属和氧化物薄膜，可处理 2 - 6 英寸的晶圆，兼容硅、化合物、玻璃、陶瓷等多种材质基板。常用于半导体、光学、材料研究等领域，如半导体芯片制造中金属电极的沉积，光学镜片增透膜、反射膜的制备 。性能：设备运行电压为三相 200V±10%，功率 50kVA 。支持电子束（EB）和电阻加热（RH）等蒸发源，实现精准薄膜沉积。配备真空计实时监测真空状态，极限真空度可达 1×10⁻⁴Pa 以下。需外接冷却水源，主系统冷却水流速要求 8L/min 及以上、压力 0.2 - 0.3MPa；低温压缩机冷却水流速 7L/min 及以上、压力 0.2 - 0.3MPa；电子枪冷却水流速 12L/min 及以上、压力 0.35 - 0.7MPa 。

Product Name: ULVAC Ei - 5KPurpose: This is a batch - type high - vacuum evaporation system suitable for R & D and small - batch production scenarios. It can deposit metal and oxide thin films on various substrates. It can process wafers from 2 to 6 inches and is compatible with substrates of various materials such as silicon, compounds, glass, and ceramics. It is commonly used in semiconductor, optical, materials research and other fields, such as the deposition of metal electrodes in semiconductor chip manufacturing and the preparation of anti - reflection and reflective coatings for optical lenses.Performance: The equipment operates at a three - phase voltage of 200V±10% with a power of 50kVA. It supports evaporation sources such as electron beam (EB) and resistance heating (RH) to achieve precise thin - film deposition. Equipped with a vacuum gauge to monitor the vacuum state in real - time, the ultimate vacuum can reach below 1×10⁻⁴Pa. External cooling water source is required. The main system requires a cooling water flow rate of 8L/min or more and a pressure of 0.2 - 0.3MPa; the cryo - compressor requires a cooling water flow rate of 7L/min or more and a pressure of 0.2 - 0.3MPa; the EB gun requires a cooling water flow rate of 12L/min or more and a pressure of 0.35 - 0.7MPa.