ANELVA ILC 1051 物理气相沉积（PVD）溅射台用途：适用于半导体制造领域，主要用于 8 英寸（200mm）晶圆的薄膜制备。能够制备金属电极、阻挡层等薄膜，例如芯片的铝互联层、钛粘附层 。性能：采用磁控溅射 PVD 技术，利用磁场约束等离子体，将靶材原子均匀地溅射至晶圆表面，使薄膜附着力强。薄膜均匀性≤1.5%（3σ 全晶圆），沉积速率最高达 800Å/min（针对金属靶材） 。在 100 - 2000Å 厚度范围，薄膜厚度控制精度可达 ±2% 。支持铝、铜、钛等常见金属靶材，适配多种半导体薄膜工艺 。

Product Name: ANELVA ILC 1051 Physical Vapor Deposition (PVD) Sputtering SystemPurpose: It is suitable for the semiconductor manufacturing field, mainly used for thin - film preparation on 8 - inch (200mm) wafers. It can prepare thin films such as metal electrodes and barrier layers, for example, the aluminum interconnect layer and titanium adhesion layer of chips.Performance: It adopts magnetron sputtering PVD technology. The magnetic field confines the plasma to uniformly sputter the target atoms onto the wafer surface, resulting in strong film adhesion. The film uniformity is ≤1.5% (3σ full wafer), and the deposition rate can reach up to 800Å/min (for metal targets). In the thickness range of 100 - 2000Å, the film thickness control accuracy can reach ±2%. It supports common metal targets such as aluminum, copper, and titanium, and is suitable for a variety of semiconductor thin - film processes.