MRC 943 溅射系统用途：这是一款直流磁控溅射设备，用于薄膜沉积，可在多种基板上沉积金属、氧化物及氮化物薄膜。在光学领域，用于制备干涉涂层；在电子领域，可沉积厚导电薄膜等，应用范围广泛。性能：采用水平配置，具备多靶扫描功能，当单次溅射材料沉积量不足时，可反向继续溅射或共溅射不同材料。拥有三个阴极，均配备防止交叉污染的不锈钢屏蔽（固定或可移动）。具备标准的射频蚀刻站，位于工艺腔内，蚀刻平台水冷且气动驱动。设备框架内集成 10kW 直流电源（可选 20kW），射频磁控或二极管操作标准功率 1.5kW（可选 3kW，13.56MHz）。可编程高真空系统控制器具备数据记录功能。基础压力可达 1x10⁻⁷托，配备涡轮泵和前级泵，离子规管抽速 5x10⁻⁵托 / 分钟，可快速达到沉积压力。能沉积 1nm - 20µm 厚度的薄膜，膜层均匀性良好 。

Product Name: MRC 943 Sputtering SystemPurpose: This is a DC magnetron sputtering equipment used for thin - film deposition. It can deposit metal, oxide, and nitride films on a variety of substrates. In the optical field, it is used to prepare interference coatings; in the electronics field, it can deposit thick conductive films, etc., with a wide range of applications.Performance: It adopts a horizontal configuration and has a multi - target scanning function. When the amount of material deposited in a single sputtering is insufficient, it can reverse and continue sputtering or co - sputter different materials. It has three cathodes, all equipped with stainless - steel shields (fixed or movable) to prevent cross - contamination. It has a standard RF etch station located inside the process chamber. The etch platform is water - cooled and pneumatically actuated. The 10kW DC power supply (20kW optional) is integrated within the equipment frame, and the standard power for RF magnetron or diode operation is 1.5kW (3kW optional, at 13.56MHz). The programmable high - vacuum system controller has data - logging functions. The base pressure can reach 1x10⁻⁷ torr, equipped with turbo pumps and backing pumps. The pumping speed of the ion gauge tube is 5x10⁻⁵ torr/min, which can quickly reach the deposition pressure. It can deposit films with a thickness ranging from 1nm to 20µm, and has good film uniformity.