阿斯迈 ASM PULSAR 3000 原子层化学气相沉积工艺模块用途：用于单晶圆薄膜沉积，在半导体制造领域应用广泛，特别是在 45 纳米及以下先进制程节点中，为 CMOS 逻辑器件、DRAM 等芯片制造提供关键的薄膜沉积工艺。可沉积基于铪的介电薄膜，如氧化铪、硅酸铪、锆铪氧化物等，这些先进材料有助于提升芯片性能，降低栅极漏电流 。性能：采用原子层沉积（ALD）技术，能实现原子级精度控制，薄膜均匀性可达 ±1% 以内，台阶覆盖率 > 95%。基于表面限制、逐层沉积的工艺，在 25-350°C 的低温下即可进行，相比其他化学气相沉积方法，对热预算要求更低。具备独特的反应腔室与源输送系统，优化了气体流动动力学，脉冲和吹扫时间短，可实现先进的工艺控制、保障薄膜纯度和均匀性。在特定高 - k 介电材料沉积中，可实现超过传统方法两倍的沉积速率，且不影响薄膜和器件性能 。

Product Name: ASM PULSAR 3000 Atomic Layer Chemical Vapor Deposition Process ModulePurpose: It is used for single - wafer thin - film deposition and is widely applied in the semiconductor manufacturing field, especially in advanced process nodes of 45 nm and below. It provides key thin - film deposition processes for the manufacturing of CMOS logic devices, DRAM and other chips. It can deposit hafnium - based dielectric films such as hafnium oxide, hafnium silicate, and hafnium zirconium oxide. These advanced materials help improve chip performance and reduce gate leakage current.Performance: It adopts atomic layer deposition (ALD) technology, which can achieve atomic - level precision control, with film uniformity within ±1% and step coverage > 95%. Based on a surface - limited, layer - by - layer deposition process, it can operate at low temperatures of 25 - 350°C, requiring a lower thermal budget compared to other chemical vapor deposition methods. It has a unique reactor chamber and source delivery system that optimizes gas - flow dynamics, with short pulse and purge times, enabling advanced process control and ensuring film purity and uniformity. In the deposition of specific high - k dielectric materials, it can achieve a deposition rate more than twice that of traditional methods without affecting film and device performance.