东电电子 TEL/TOKYO ELECTRON Trias e + 系列用途：这是一系列先进的单晶片沉积系统，适用于 300mm 晶圆的处理。主要用于半导体制造中，实现高精度金属沉积工艺，如 Ti、TiN 和 W 等材料的沉积，以满足插头和电极形成的需求。在复杂的半导体器件制造，如先进逻辑芯片、3D NAND 闪存等生产过程中发挥关键作用。性能：具备可集成多种 300mm 处理模块的灵活设计，最多能集成四个处理腔室。以 Trias e+ EX-II TiN 为例，该型号采用优化的反应器设计与新型气体注入模块，能实现高速 ASFD（先进顺序流沉积），可形成高质量薄膜，具有出色的晶圆内均匀性（偏差极小）和高台阶覆盖特性，在前沿半导体器件制造中也能保持高生产率。Trias e+ Ti/TiN 使用 TiCl4 形成高台阶覆盖的 Ti/TiN 薄膜，在高深宽比接触孔应用中表现优异 。

Product Name: TEL/TOKYO ELECTRON Trias e+ SeriesPurpose: This is a series of advanced single - wafer deposition systems suitable for the processing of 300mm wafers. It is mainly used in semiconductor manufacturing to achieve high - precision metal deposition processes, such as the deposition of materials like Ti, TiN, and W to meet the requirements of plug and electrode formation. It plays a key role in the manufacturing of complex semiconductor devices, such as advanced logic chips and 3D NAND flash memory.Performance: It has a flexible design that can integrate a variety of 300mm processing modules, with up to four process chambers that can be integrated. Taking Trias e+ EX - II TiN as an example, this model adopts an optimized reactor design and a new gas injection module, enabling high - speed ASFD (Advanced Sequential Flow Deposition). It can form high - quality thin films with excellent within - wafer uniformity (with minimal deviation) and high step - coverage characteristics, and can maintain high productivity even in leading - edge semiconductor device manufacturing. Trias e+ Ti/TiN uses TiCl4 to form high - step - coverage Ti/TiN films and performs excellently in high - aspect - ratio contact hole applications.