ANELVA I - 1201 物理气相沉积（PVD）设备用途：适用于 12 英寸（300mm）晶圆的制造工艺，在半导体领域可用于集成电路中金属互连层、阻挡层、种子层等关键薄膜的沉积，例如铜互连工艺中的铜阻挡层与种子层制备 。性能：具备高真空环境营造能力，确保薄膜沉积过程不受杂质干扰。可精确调控多种工艺参数，如溅射功率、气体流量等，实现稳定且精准的薄膜沉积。设备采用先进的溅射技术，薄膜厚度均匀性良好，能满足先进半导体制造工艺对薄膜一致性的严格要求 。

Product Name: ANELVA I - 1201 Physical Vapor Deposition (PVD) EquipmentPurpose: It is suitable for the manufacturing process of 12 - inch (300mm) wafers. In the semiconductor field, it can be used for the deposition of key thin films such as metal interconnect layers, barrier layers, and seed layers in integrated circuits. For example, it is used in the preparation of copper barrier layers and seed layers in the copper interconnect process.Performance: It has the ability to create a high - vacuum environment, ensuring that the thin - film deposition process is not interfered by impurities. It can precisely adjust a variety of process parameters such as sputtering power and gas flow to achieve stable and accurate thin - film deposition. The equipment adopts advanced sputtering technology, and the film thickness uniformity is good, meeting the strict requirements of advanced semiconductor manufacturing processes for film consistency.