东电电子 TEL/TOKYO ELECTRON NT333-H1-2A-3A-B-SN用途：这是一款原子层沉积（ALD）设备，主要用于半导体制造领域。可用于沉积高 k 介电层、金属栅极阻挡层、侧壁间隔层等超薄膜，适用于 FinFET、3D NAND 等先进半导体结构，广泛应用于逻辑芯片、存储器、功率半导体等生产。性能：采用脉冲式 ALD 供气，可控制单原子层沉积，膜厚精度达 0.1nm 级别。具备等离子体增强 ALD（PEALD）功能，能在低温下实现金属氧化物、氮化物等薄膜沉积。可处理 12 英寸晶圆，单个晶圆处理平台具有同时搭载五至六枚晶圆的容量1。独特的等离子保护结构，可在不损伤晶圆的同时，实现高均一性的膜质。

Product Name: TEL/TOKYO ELECTRON NT333 - H1 - 2A - 3A - B - SNPurpose: This is an atomic layer deposition (ALD) equipment, mainly used in the semiconductor manufacturing field. It can be used to deposit ultra - thin films such as high - k dielectric layers, metal gate barrier layers, and side - wall spacers. It is suitable for advanced semiconductor structures such as FinFET and 3D NAND, and is widely used in the production of logic chips, memories, power semiconductors, etc..Performance: It adopts pulsed ALD gas supply, which can control single - atom layer deposition, and the film thickness accuracy reaches the 0.1nm level. It has the function of plasma - enhanced ALD (PEALD), which can realize the deposition of metal oxide, nitride and other thin films at low temperature. It can process 12 - inch wafers, and the single - wafer processing platform has a capacity of carrying five to six wafers at the same time1. The unique plasma protection structure can achieve high - uniformity film quality without damaging the wafers.